Quasi-reversible point defect relaxation in amorphous In-Ga-Zn-O thin films by in situ electrical measurements

Alexander U. Adler*, Ted C. Yeh, D. Bruce Buchholz, Robert P.H. Chang, Thomas O. Mason

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Quasi-reversible oxygen exchange/point defect relaxation in an amorphous In-Ga-Zn-O thin film was monitored by in situ electrical property measurements (conductivity, Seebeck coefficient) at 200 °C subjected to abrupt changes in oxygen partial pressure (p O 2). By subtracting the long-term background decay from the conductivity curves, time-independent conductivity values were obtained at each p O 2. From these values, a log-log Brouwer plot of conductivity vs. p O 2 of approximately -1/2 was obtained, which may indicate co-elimination (filling) of neutral and charged oxygen vacancies. This work demonstrates that Brouwer analysis can be applied to the study of defect structure in amorphous oxide thin films.

Original languageEnglish (US)
Article number122103
JournalApplied Physics Letters
Volume102
Issue number12
DOIs
StatePublished - Mar 25 2013

Funding

This work was supported by and made use of central facilities of the Materials Research Center at Northwestern University under NSF-MRSEC Grant No. DMR-1121262. This work made use of the J.B. Cohen X-Ray Diffraction Facility supported by the MRSEC program of the National Science Foundation (DMR-1121262) at the Materials Research Center of Northwestern University. The SIMS work was performed in the Keck-II facility of NUANCE Center at Northwestern University. The NUANCE Center is supported by NSF-NSEC, NSF-MRSEC, Keck Foundation, the State of Illinois, and Northwestern University.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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