@article{d9f2451aef6d488799ce0a81272a2229,
title = "Quasi-reversible point defect relaxation in amorphous In-Ga-Zn-O thin films by in situ electrical measurements",
abstract = "Quasi-reversible oxygen exchange/point defect relaxation in an amorphous In-Ga-Zn-O thin film was monitored by in situ electrical property measurements (conductivity, Seebeck coefficient) at 200 °C subjected to abrupt changes in oxygen partial pressure (p O 2). By subtracting the long-term background decay from the conductivity curves, time-independent conductivity values were obtained at each p O 2. From these values, a log-log Brouwer plot of conductivity vs. p O 2 of approximately -1/2 was obtained, which may indicate co-elimination (filling) of neutral and charged oxygen vacancies. This work demonstrates that Brouwer analysis can be applied to the study of defect structure in amorphous oxide thin films.",
author = "Adler, {Alexander U.} and Yeh, {Ted C.} and {Bruce Buchholz}, D. and Chang, {Robert P.H.} and Mason, {Thomas O.}",
note = "Funding Information: This work was supported by and made use of central facilities of the Materials Research Center at Northwestern University under NSF-MRSEC Grant No. DMR-1121262. This work made use of the J.B. Cohen X-Ray Diffraction Facility supported by the MRSEC program of the National Science Foundation (DMR-1121262) at the Materials Research Center of Northwestern University. The SIMS work was performed in the Keck-II facility of NUANCE Center at Northwestern University. The NUANCE Center is supported by NSF-NSEC, NSF-MRSEC, Keck Foundation, the State of Illinois, and Northwestern University. Copyright: Copyright 2013 Elsevier B.V., All rights reserved.",
year = "2013",
month = mar,
day = "25",
doi = "10.1063/1.4796119",
language = "English (US)",
volume = "102",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "12",
}