Abstract
Quasi-reversible oxygen exchange/point defect relaxation in an amorphous In-Ga-Zn-O thin film was monitored by in situ electrical property measurements (conductivity, Seebeck coefficient) at 200 °C subjected to abrupt changes in oxygen partial pressure (p O 2). By subtracting the long-term background decay from the conductivity curves, time-independent conductivity values were obtained at each p O 2. From these values, a log-log Brouwer plot of conductivity vs. p O 2 of approximately -1/2 was obtained, which may indicate co-elimination (filling) of neutral and charged oxygen vacancies. This work demonstrates that Brouwer analysis can be applied to the study of defect structure in amorphous oxide thin films.
Original language | English (US) |
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Article number | 122103 |
Journal | Applied Physics Letters |
Volume | 102 |
Issue number | 12 |
DOIs | |
State | Published - Mar 25 2013 |
Funding
This work was supported by and made use of central facilities of the Materials Research Center at Northwestern University under NSF-MRSEC Grant No. DMR-1121262. This work made use of the J.B. Cohen X-Ray Diffraction Facility supported by the MRSEC program of the National Science Foundation (DMR-1121262) at the Materials Research Center of Northwestern University. The SIMS work was performed in the Keck-II facility of NUANCE Center at Northwestern University. The NUANCE Center is supported by NSF-NSEC, NSF-MRSEC, Keck Foundation, the State of Illinois, and Northwestern University.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)