Raman and TEM characterization of high fluence C implanted nanometric Si on insulator

Roberto dos Reis, R. L. Maltez*, E. C. Moreira, Y. P. Dias, H. Boudinov

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

In this work we present Raman and transmission electron microscopy (TEM) characterization of high fluence C implanted nanometric silicon on insulator. The analyzed samples were 35 and 60 nm top layers of Si, which were entirely converted into SiC layers by 2.3 × 10 17 cm -2 and 4.0 × 10 17 cm -2 carbon implantations. We report the behavior of CC signal from Raman spectra for such overall Si to SiC conversions before and after 1250°C annealing. A remarkable effect is observed in the region of C signal (1100-1700 cm -1 ), where fitting with Lorentzian curves reveals that there are different types of CC bonds. Raman spectroscopy in this region was then employed to relatively characterize the SiC structural quality. TEM measurements support our Raman interpretation by direct structural evaluation of the formed SiC layers.

Original languageEnglish (US)
Pages (from-to)7395-7400
Number of pages6
JournalApplied Surface Science
Volume258
Issue number19
DOIs
StatePublished - Jul 15 2012

Keywords

  • C implantation
  • Ion beam synthesis
  • Raman spectroscopy
  • SiC layer on insulator
  • TEM

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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