Raman and TEM characterization of high fluence C implanted nanometric Si on insulator

Roberto dos Reis; R. L. Maltez; E. C. Moreira; Y. P. Dias; H. Boudinov

doi:10.1016/j.apsusc.2012.04.044

Raman and TEM characterization of high fluence C implanted nanometric Si on insulator

Roberto dos Reis, R. L. Maltez^*, E. C. Moreira, Y. P. Dias, H. Boudinov

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

In this work we present Raman and transmission electron microscopy (TEM) characterization of high fluence C implanted nanometric silicon on insulator. The analyzed samples were 35 and 60 nm top layers of Si, which were entirely converted into SiC layers by 2.3 × 10 ¹⁷ cm ^-2 and 4.0 × 10 ¹⁷ cm ^-2 carbon implantations. We report the behavior of CC signal from Raman spectra for such overall Si to SiC conversions before and after 1250°C annealing. A remarkable effect is observed in the region of C signal (1100-1700 cm ^-1 ), where fitting with Lorentzian curves reveals that there are different types of CC bonds. Raman spectroscopy in this region was then employed to relatively characterize the SiC structural quality. TEM measurements support our Raman interpretation by direct structural evaluation of the formed SiC layers.

Original language	English (US)
Pages (from-to)	7395-7400
Number of pages	6
Journal	Applied Surface Science
Volume	258
Issue number	19
DOIs	https://doi.org/10.1016/j.apsusc.2012.04.044
State	Published - Jul 15 2012

Keywords

C implantation
Ion beam synthesis
Raman spectroscopy
SiC layer on insulator
TEM

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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@article{a1f7bd9c3ec242ce9fc5c4d3abfa2d7e,

title = "Raman and TEM characterization of high fluence C implanted nanometric Si on insulator",

abstract = " In this work we present Raman and transmission electron microscopy (TEM) characterization of high fluence C implanted nanometric silicon on insulator. The analyzed samples were 35 and 60 nm top layers of Si, which were entirely converted into SiC layers by 2.3 × 10 17 cm -2 and 4.0 × 10 17 cm -2 carbon implantations. We report the behavior of CC signal from Raman spectra for such overall Si to SiC conversions before and after 1250°C annealing. A remarkable effect is observed in the region of C signal (1100-1700 cm -1 ), where fitting with Lorentzian curves reveals that there are different types of CC bonds. Raman spectroscopy in this region was then employed to relatively characterize the SiC structural quality. TEM measurements support our Raman interpretation by direct structural evaluation of the formed SiC layers.",

keywords = "C implantation, Ion beam synthesis, Raman spectroscopy, SiC layer on insulator, TEM",

author = "{dos Reis}, Roberto and Maltez, {R. L.} and Moreira, {E. C.} and Dias, {Y. P.} and H. Boudinov",

year = "2012",

month = jul,

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doi = "10.1016/j.apsusc.2012.04.044",

language = "English (US)",

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pages = "7395--7400",

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TY - JOUR

T1 - Raman and TEM characterization of high fluence C implanted nanometric Si on insulator

AU - dos Reis, Roberto

AU - Maltez, R. L.

AU - Moreira, E. C.

AU - Dias, Y. P.

AU - Boudinov, H.

PY - 2012/7/15

Y1 - 2012/7/15

N2 - In this work we present Raman and transmission electron microscopy (TEM) characterization of high fluence C implanted nanometric silicon on insulator. The analyzed samples were 35 and 60 nm top layers of Si, which were entirely converted into SiC layers by 2.3 × 10 17 cm -2 and 4.0 × 10 17 cm -2 carbon implantations. We report the behavior of CC signal from Raman spectra for such overall Si to SiC conversions before and after 1250°C annealing. A remarkable effect is observed in the region of C signal (1100-1700 cm -1 ), where fitting with Lorentzian curves reveals that there are different types of CC bonds. Raman spectroscopy in this region was then employed to relatively characterize the SiC structural quality. TEM measurements support our Raman interpretation by direct structural evaluation of the formed SiC layers.

AB - In this work we present Raman and transmission electron microscopy (TEM) characterization of high fluence C implanted nanometric silicon on insulator. The analyzed samples were 35 and 60 nm top layers of Si, which were entirely converted into SiC layers by 2.3 × 10 17 cm -2 and 4.0 × 10 17 cm -2 carbon implantations. We report the behavior of CC signal from Raman spectra for such overall Si to SiC conversions before and after 1250°C annealing. A remarkable effect is observed in the region of C signal (1100-1700 cm -1 ), where fitting with Lorentzian curves reveals that there are different types of CC bonds. Raman spectroscopy in this region was then employed to relatively characterize the SiC structural quality. TEM measurements support our Raman interpretation by direct structural evaluation of the formed SiC layers.

KW - C implantation

KW - Ion beam synthesis

KW - Raman spectroscopy

KW - SiC layer on insulator

KW - TEM

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U2 - 10.1016/j.apsusc.2012.04.044

DO - 10.1016/j.apsusc.2012.04.044

M3 - Article

AN - SCOPUS:84861344020

VL - 258

SP - 7395

EP - 7400

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 19

ER -

Raman and TEM characterization of high fluence C implanted nanometric Si on insulator

Abstract

Keywords

ASJC Scopus subject areas

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