Abstract
In this work we present Raman and transmission electron microscopy (TEM) characterization of high fluence C implanted nanometric silicon on insulator. The analyzed samples were 35 and 60 nm top layers of Si, which were entirely converted into SiC layers by 2.3 × 10 17 cm -2 and 4.0 × 10 17 cm -2 carbon implantations. We report the behavior of CC signal from Raman spectra for such overall Si to SiC conversions before and after 1250°C annealing. A remarkable effect is observed in the region of C signal (1100-1700 cm -1 ), where fitting with Lorentzian curves reveals that there are different types of CC bonds. Raman spectroscopy in this region was then employed to relatively characterize the SiC structural quality. TEM measurements support our Raman interpretation by direct structural evaluation of the formed SiC layers.
Original language | English (US) |
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Pages (from-to) | 7395-7400 |
Number of pages | 6 |
Journal | Applied Surface Science |
Volume | 258 |
Issue number | 19 |
DOIs | |
State | Published - Jul 15 2012 |
Funding
The authors gratefully acknowledge financial support from FAPERGS , CNPq and Capes .
Keywords
- C implantation
- Ion beam synthesis
- Raman spectroscopy
- SiC layer on insulator
- TEM
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- General Physics and Astronomy
- Surfaces and Interfaces
- Surfaces, Coatings and Films