TY - JOUR
T1 - Range profiles of low-energy (100 to 1500 eV) implanted 3He and 4He atoms in tungsten I. Experimental results
AU - Amano, Jun
AU - Wagner, Alfred
AU - Seidman, David N.
N1 - Funding Information:
This research was supported by the U.S. Department of Energy. Additional support wa8 received from the National Science Foundation through the use of the technical facilities of the Materials Science Center at Cornell University.
PY - 1981/7
Y1 - 1981/7
N2 - The range profiles of low-energy (100 to 1500 eV) 3He and 4He atoms implanted in situ, parallel to the [110] direction (±5°) of tungsten, at 60 K have been measured employing an atom-probe field-ion microscope. The absolute depth of each deposited helium atom, from the irradiated surface, was measured directly to within one (110) interplanar spacing (27middot;24 Å). At 60 K both 3He and 4He were found, in other research, to be immobile; thus, the range profiles were determined in the complete absence of any diffusional effects. The mean range (α) of the 3He and 4He range profiles increases monotonically, although non-linearly, as the implantation energy was increased from 100 to 1500 eV; the value of x varies from 33 to 158 Å and from 19 to 195 Å for the 3He and 4He profiles, respectively. The straggling (Δx) of the 3He and 4He range profiles also increases monotonically, although non-linearly, as the implantation energy was increased from 100 to 1500 eV; the value of Δx varies from 23 to 97 Å and from 16 to 124Å for the 3He and 4He profiles, respectively. All of the 3He and 4He range profiles exhibit positive skewness; that is, they are skewed from a normal distribution.
AB - The range profiles of low-energy (100 to 1500 eV) 3He and 4He atoms implanted in situ, parallel to the [110] direction (±5°) of tungsten, at 60 K have been measured employing an atom-probe field-ion microscope. The absolute depth of each deposited helium atom, from the irradiated surface, was measured directly to within one (110) interplanar spacing (27middot;24 Å). At 60 K both 3He and 4He were found, in other research, to be immobile; thus, the range profiles were determined in the complete absence of any diffusional effects. The mean range (α) of the 3He and 4He range profiles increases monotonically, although non-linearly, as the implantation energy was increased from 100 to 1500 eV; the value of x varies from 33 to 158 Å and from 19 to 195 Å for the 3He and 4He profiles, respectively. The straggling (Δx) of the 3He and 4He range profiles also increases monotonically, although non-linearly, as the implantation energy was increased from 100 to 1500 eV; the value of Δx varies from 23 to 97 Å and from 16 to 124Å for the 3He and 4He profiles, respectively. All of the 3He and 4He range profiles exhibit positive skewness; that is, they are skewed from a normal distribution.
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U2 - 10.1080/01418618108244501
DO - 10.1080/01418618108244501
M3 - Article
AN - SCOPUS:0019584432
SN - 0141-8610
VL - 44
SP - 177
EP - 198
JO - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
JF - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
IS - 1
ER -