Rapid characterization of ultrathin layers of chalcogenides on SiO 2/Si substrates

Dattatray J. Late, Bin Liu, H. S.S.Ramakrishna Matte, C. N.R. Rao, Vinayak P. Dravid*

*Corresponding author for this work

Research output: Contribution to journalArticle

336 Scopus citations

Abstract

There has been emerging interest in exploring single-sheet 2D layered structures other than graphene to explore potentially interesting properties and phenomena. The preparation, isolation and rapid unambiguous characterization of large size ultrathin layers of MoS 2, GaS, and GaSe deposited onto SiO 2/Si substrates is reported. Optical color contrast is identified using reflection optical microscopy for layers with various thicknesses. The optical contrast of these thin layers is correlated with atomic force microscopy (AFM) and Raman spectroscopy to determine the exact thickness and to calculate number of the atomic layers present in the thin flakes and sheets. Collectively, optical microscopy, AFM, and Raman spectroscopy combined with Raman imaging data are analyzed to determine the thickness (and thus, the number of unit layers) of the MoS 2, GaS, and GaSe ultrathin flakes in a fast, non-destructive, and unambiguous manner. These findings may enable experimental access to and unambiguous determination of layered chalcogenides for scientific exploration and potential technological applications.

Original languageEnglish (US)
Pages (from-to)1894-1905
Number of pages12
JournalAdvanced Functional Materials
Volume22
Issue number9
DOIs
StatePublished - May 9 2012

Keywords

  • Raman imaging
  • Raman spectroscopy
  • atomic force microscopy
  • layered materials
  • optical contrast

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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