TY - JOUR
T1 - Rapid characterization of ultrathin layers of chalcogenides on SiO 2/Si substrates
AU - Late, Dattatray J.
AU - Liu, Bin
AU - Matte, H. S.S.Ramakrishna
AU - Rao, C. N.R.
AU - Dravid, Vinayak P.
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012/5/9
Y1 - 2012/5/9
N2 - There has been emerging interest in exploring single-sheet 2D layered structures other than graphene to explore potentially interesting properties and phenomena. The preparation, isolation and rapid unambiguous characterization of large size ultrathin layers of MoS 2, GaS, and GaSe deposited onto SiO 2/Si substrates is reported. Optical color contrast is identified using reflection optical microscopy for layers with various thicknesses. The optical contrast of these thin layers is correlated with atomic force microscopy (AFM) and Raman spectroscopy to determine the exact thickness and to calculate number of the atomic layers present in the thin flakes and sheets. Collectively, optical microscopy, AFM, and Raman spectroscopy combined with Raman imaging data are analyzed to determine the thickness (and thus, the number of unit layers) of the MoS 2, GaS, and GaSe ultrathin flakes in a fast, non-destructive, and unambiguous manner. These findings may enable experimental access to and unambiguous determination of layered chalcogenides for scientific exploration and potential technological applications.
AB - There has been emerging interest in exploring single-sheet 2D layered structures other than graphene to explore potentially interesting properties and phenomena. The preparation, isolation and rapid unambiguous characterization of large size ultrathin layers of MoS 2, GaS, and GaSe deposited onto SiO 2/Si substrates is reported. Optical color contrast is identified using reflection optical microscopy for layers with various thicknesses. The optical contrast of these thin layers is correlated with atomic force microscopy (AFM) and Raman spectroscopy to determine the exact thickness and to calculate number of the atomic layers present in the thin flakes and sheets. Collectively, optical microscopy, AFM, and Raman spectroscopy combined with Raman imaging data are analyzed to determine the thickness (and thus, the number of unit layers) of the MoS 2, GaS, and GaSe ultrathin flakes in a fast, non-destructive, and unambiguous manner. These findings may enable experimental access to and unambiguous determination of layered chalcogenides for scientific exploration and potential technological applications.
KW - Raman imaging
KW - Raman spectroscopy
KW - atomic force microscopy
KW - layered materials
KW - optical contrast
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U2 - 10.1002/adfm.201102913
DO - 10.1002/adfm.201102913
M3 - Article
AN - SCOPUS:84860779053
VL - 22
SP - 1894
EP - 1905
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 9
ER -