Abstract
The electron precession diffraction technique is employed to provide quasi-kinematical data for determination of atom positions in the (Ga,In) 2SnO5 m-phase. Precession data are compared with conventional diffraction data captured under identical conditions and show a distinct superiority because they exhibit kinematical characteristics in the structure-defining reflections. Precessed data are not usable within a kinematical interpretation in all cases, and a simple basis is presented for omission of errant reflections to improve adherence to kinematical behavior. A second approach is demonstrated where intensities are used with direct methods instead of amplitudes, enhancing the contrast between strong and weak beams. The unrefined atom positions recovered a priori via direct methods are consistent between the two approaches and fall on average within 4 picometers of positions in the previously refined structure.
Original language | English (US) |
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Pages (from-to) | 114-122 |
Number of pages | 9 |
Journal | Ultramicroscopy |
Volume | 106 |
Issue number | 2 |
DOIs | |
State | Published - Jan 2006 |
Funding
Funding for this project was provided by UOP LLC, STCS, DOE (Grant no. DE-FG02-03ER 15457), and the Fannie and John Hertz Foundation.
Keywords
- Crystallography
- Direct methods
- Electron diffraction
- Electron precession
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Instrumentation