Rare-earth doped epitaxial InGaP and its optical properties

Bruce W Wessels

Rare-earth doped epitaxial InGaP and its optical properties

Bruce W Wessels^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The optical properties of rare-earth impurities in InGaP and the factors which influence their luminescence efficiency are presented. Basic energy transfer processes are described. Practical devices that utilize characteristic rare-earth luminescence are reported.

Original language	English (US)
Pages (from-to)	247-254
Number of pages	8
Journal	Materials Research Society Symposium - Proceedings
Volume	422
State	Published - Dec 1 1996
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Fingerprint Dive into the research topics of 'Rare-earth doped epitaxial InGaP and its optical properties'. Together they form a unique fingerprint.

Cite this

@article{9718756ceedf4061b0e26d556b47544c,

title = "Rare-earth doped epitaxial InGaP and its optical properties",

abstract = "The optical properties of rare-earth impurities in InGaP and the factors which influence their luminescence efficiency are presented. Basic energy transfer processes are described. Practical devices that utilize characteristic rare-earth luminescence are reported.",

author = "Wessels, {Bruce W}",

year = "1996",

month = dec,

day = "1",

language = "English (US)",

volume = "422",

pages = "247--254",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

}

TY - JOUR

T1 - Rare-earth doped epitaxial InGaP and its optical properties

AU - Wessels, Bruce W

PY - 1996/12/1

Y1 - 1996/12/1

N2 - The optical properties of rare-earth impurities in InGaP and the factors which influence their luminescence efficiency are presented. Basic energy transfer processes are described. Practical devices that utilize characteristic rare-earth luminescence are reported.

AB - The optical properties of rare-earth impurities in InGaP and the factors which influence their luminescence efficiency are presented. Basic energy transfer processes are described. Practical devices that utilize characteristic rare-earth luminescence are reported.

UR - http://www.scopus.com/inward/record.url?scp=0030399802&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030399802&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030399802

VL - 422

SP - 247

EP - 254

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Rare-earth doped epitaxial InGaP and its optical properties

Abstract

ASJC Scopus subject areas

Other files and links

Cite this