Rare-earth doped epitaxial InGaP and its optical properties

Bruce W Wessels*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

The optical properties of rare-earth impurities in InGaP and the factors which influence their luminescence efficiency are presented. Basic energy transfer processes are described. Practical devices that utilize characteristic rare-earth luminescence are reported.

Original languageEnglish (US)
Pages (from-to)247-254
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
Volume422
StatePublished - Dec 1 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Rare-earth doped epitaxial InGaP and its optical properties'. Together they form a unique fingerprint.

Cite this