Abstract
The optical properties of rare-earth impurities in InGaP and the factors which influence their luminescence efficiency are presented. Basic energy transfer processes are described. Practical devices that utilize characteristic rare-earth luminescence are reported.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 247-254 |
| Number of pages | 8 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 422 |
| State | Published - Dec 1 1996 |
| Event | Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering