Rate-equation modelling of ion beam assisted homoepitaxy on low-index surfaces of Ag and Cu

Jussi K. Sillanpää*, Ismo T. Koponen, Niels Grønbech-Jensen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


We develop a rate-equation model for ion beam assisted homoepitaxy. The model describes how island diffusion, detachment and breakup, generation of surface damage and interlayer transitions of adatoms and monovacancies affect the growth. We simulate the (100) and (110) surfaces of silver and the (100) surface of copper using potential energy barriers calculated using either surface embedded atom method (SEAM) or the effective medium theory (EMT). We study how the choice of the potential barriers affects the growth and comment on the suitability of SEAM and EMT for calculating barriers for surface simulation. We demonstrate how different processes affect the microstructure of the film, compare the growth on different surfaces and study the scaling properties of the results.

Original languageEnglish (US)
Pages (from-to)111-116
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2002
EventMagnetic and Electronic Films - Microstructure, Texture and Application to Data Storage - San Francisco, United States
Duration: Apr 1 2002Apr 4 2002

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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