Rate-equation modelling of ion beam assisted homoepitaxy on low-index surfaces of Ag and Cu

Jussi K. Sillanpää; Ismo T. Koponen; Niels Grønbech-Jensen

doi:10.1557/proc-721-j4.7

Rate-equation modelling of ion beam assisted homoepitaxy on low-index surfaces of Ag and Cu

Jussi K. Sillanpää^*, Ismo T. Koponen, Niels Grønbech-Jensen

^*Corresponding author for this work

Radiation Oncology

Research output: Contribution to journal › Conference article › peer-review

Abstract

We develop a rate-equation model for ion beam assisted homoepitaxy. The model describes how island diffusion, detachment and breakup, generation of surface damage and interlayer transitions of adatoms and monovacancies affect the growth. We simulate the (100) and (110) surfaces of silver and the (100) surface of copper using potential energy barriers calculated using either surface embedded atom method (SEAM) or the effective medium theory (EMT). We study how the choice of the potential barriers affects the growth and comment on the suitability of SEAM and EMT for calculating barriers for surface simulation. We demonstrate how different processes affect the microstructure of the film, compare the growth on different surfaces and study the scaling properties of the results.

Original language	English (US)
Pages (from-to)	111-116
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	721
DOIs	https://doi.org/10.1557/proc-721-j4.7
State	Published - 2002
Event	Magnetic and Electronic Films - Microstructure, Texture and Application to Data Storage - San Francisco, United States Duration: Apr 1 2002 → Apr 4 2002

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-721-j4.7

Cite this

@article{af291ec885b146c4b20e5a11af443142,

title = "Rate-equation modelling of ion beam assisted homoepitaxy on low-index surfaces of Ag and Cu",

abstract = "We develop a rate-equation model for ion beam assisted homoepitaxy. The model describes how island diffusion, detachment and breakup, generation of surface damage and interlayer transitions of adatoms and monovacancies affect the growth. We simulate the (100) and (110) surfaces of silver and the (100) surface of copper using potential energy barriers calculated using either surface embedded atom method (SEAM) or the effective medium theory (EMT). We study how the choice of the potential barriers affects the growth and comment on the suitability of SEAM and EMT for calculating barriers for surface simulation. We demonstrate how different processes affect the microstructure of the film, compare the growth on different surfaces and study the scaling properties of the results.",

author = "Sillanp{\"a}{\"a}, {Jussi K.} and Koponen, {Ismo T.} and Niels Gr{\o}nbech-Jensen",

year = "2002",

doi = "10.1557/proc-721-j4.7",

language = "English (US)",

volume = "721",

pages = "111--116",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Magnetic and Electronic Films - Microstructure, Texture and Application to Data Storage ; Conference date: 01-04-2002 Through 04-04-2002",

}

TY - JOUR

T1 - Rate-equation modelling of ion beam assisted homoepitaxy on low-index surfaces of Ag and Cu

AU - Sillanpää, Jussi K.

AU - Koponen, Ismo T.

AU - Grønbech-Jensen, Niels

PY - 2002

Y1 - 2002

N2 - We develop a rate-equation model for ion beam assisted homoepitaxy. The model describes how island diffusion, detachment and breakup, generation of surface damage and interlayer transitions of adatoms and monovacancies affect the growth. We simulate the (100) and (110) surfaces of silver and the (100) surface of copper using potential energy barriers calculated using either surface embedded atom method (SEAM) or the effective medium theory (EMT). We study how the choice of the potential barriers affects the growth and comment on the suitability of SEAM and EMT for calculating barriers for surface simulation. We demonstrate how different processes affect the microstructure of the film, compare the growth on different surfaces and study the scaling properties of the results.

AB - We develop a rate-equation model for ion beam assisted homoepitaxy. The model describes how island diffusion, detachment and breakup, generation of surface damage and interlayer transitions of adatoms and monovacancies affect the growth. We simulate the (100) and (110) surfaces of silver and the (100) surface of copper using potential energy barriers calculated using either surface embedded atom method (SEAM) or the effective medium theory (EMT). We study how the choice of the potential barriers affects the growth and comment on the suitability of SEAM and EMT for calculating barriers for surface simulation. We demonstrate how different processes affect the microstructure of the film, compare the growth on different surfaces and study the scaling properties of the results.

UR - http://www.scopus.com/inward/record.url?scp=0036456208&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036456208&partnerID=8YFLogxK

U2 - 10.1557/proc-721-j4.7

DO - 10.1557/proc-721-j4.7

M3 - Conference article

AN - SCOPUS:0036456208

SN - 0272-9172

VL - 721

SP - 111

EP - 116

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Magnetic and Electronic Films - Microstructure, Texture and Application to Data Storage

Y2 - 1 April 2002 through 4 April 2002

ER -

Rate-equation modelling of ion beam assisted homoepitaxy on low-index surfaces of Ag and Cu

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this