REAL-TIME DIAGNOSIS OF ETCHING AND DEPOSITION PROCESS BY SPECTROSCOPIC ELLIPSOMETRY.

D. E. Aspnes; R. P H Chang

REAL-TIME DIAGNOSIS OF ETCHING AND DEPOSITION PROCESS BY SPECTROSCOPIC ELLIPSOMETRY.

D. E. Aspnes^*, R. P H Chang

^*Corresponding author for this work

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

Recent advances in instrumentation and data analysis have made spectroscopic ellipsometry a routine analytic tool with submonolayer sensitivity for monitoring and controlling cleaning, etching, deposition, or other processes that take place in relatively high-pressure or reactive environments. We discuss representative applications in chemical etching, plasma processing, and MOCVD to illustrate analytical procedures and to indicate other potential uses of the technique.

Original language	English (US)
Title of host publication	Materials Research Society Symposia Proceedings
Editors	A.Wayne Johnson, Daniel J. Ehrlich, Howard R. Schlossberg
Publisher	North-Holland
Pages	217-224
Number of pages	8
Volume	29
ISBN (Print)	0444008942
State	Published - Dec 1 1984

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{b376679c92b34cb48ad32c64c5f61b14,

title = "REAL-TIME DIAGNOSIS OF ETCHING AND DEPOSITION PROCESS BY SPECTROSCOPIC ELLIPSOMETRY.",

abstract = "Recent advances in instrumentation and data analysis have made spectroscopic ellipsometry a routine analytic tool with submonolayer sensitivity for monitoring and controlling cleaning, etching, deposition, or other processes that take place in relatively high-pressure or reactive environments. We discuss representative applications in chemical etching, plasma processing, and MOCVD to illustrate analytical procedures and to indicate other potential uses of the technique.",

author = "Aspnes, {D. E.} and Chang, {R. P H}",

year = "1984",

month = dec,

day = "1",

language = "English (US)",

isbn = "0444008942",

volume = "29",

pages = "217--224",

editor = "A.Wayne Johnson and Ehrlich, {Daniel J.} and Schlossberg, {Howard R.}",

booktitle = "Materials Research Society Symposia Proceedings",

publisher = "North-Holland",

}

TY - GEN

T1 - REAL-TIME DIAGNOSIS OF ETCHING AND DEPOSITION PROCESS BY SPECTROSCOPIC ELLIPSOMETRY.

AU - Aspnes, D. E.

AU - Chang, R. P H

PY - 1984/12/1

Y1 - 1984/12/1

N2 - Recent advances in instrumentation and data analysis have made spectroscopic ellipsometry a routine analytic tool with submonolayer sensitivity for monitoring and controlling cleaning, etching, deposition, or other processes that take place in relatively high-pressure or reactive environments. We discuss representative applications in chemical etching, plasma processing, and MOCVD to illustrate analytical procedures and to indicate other potential uses of the technique.

AB - Recent advances in instrumentation and data analysis have made spectroscopic ellipsometry a routine analytic tool with submonolayer sensitivity for monitoring and controlling cleaning, etching, deposition, or other processes that take place in relatively high-pressure or reactive environments. We discuss representative applications in chemical etching, plasma processing, and MOCVD to illustrate analytical procedures and to indicate other potential uses of the technique.

UR - http://www.scopus.com/inward/record.url?scp=0021578052&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021578052&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0021578052

SN - 0444008942

VL - 29

SP - 217

EP - 224

BT - Materials Research Society Symposia Proceedings

A2 - Johnson, A.Wayne

A2 - Ehrlich, Daniel J.

A2 - Schlossberg, Howard R.

PB - North-Holland

ER -

REAL-TIME DIAGNOSIS OF ETCHING AND DEPOSITION PROCESS BY SPECTROSCOPIC ELLIPSOMETRY.

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this