Recent advances in III-Nitride materials, characterization and device applications

M. Razeghi*, X. Zhang, P. Kung, A. Saxler, D. Walker, K. Y. Lim, K. S. Kim

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

High-quality AlN, GaN, AlGaN have been grown on sapphire substrate by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The X-Ray rocking curve of AlN and GaN were 100 arcsecs and 30 arcsecs respectively with Pendellösung oscillations, which are the best reported to date. GaN with high crystallinity simultaneously exhibited high optical and electrical quality. Photoluminescence linewidth of GaN at 77K was as low as 17 meV, which is the best reported to date. Si-doped GaN had a mobility higher than 300 cm 2/V.s. GaN has been also successfully grown on LiGaO2 substrate with LP-MOCVD for the first time. AlGaN for the entire composition range has been grown. These layers exhibited the lowest X-Ray FWHM reported to date. The excellent optical quality of these layers have been characterized by room temperature UV transmission and photoluminescence. N-type doping of AlGaN with Si has been achieved up to 60% Al with mobility as high as 78 cm 2/V.s. AlxGa1-xN/AlyGa 1-yN superlattice with atomically sharp interface have been demonstrated. Optically-pumped stimulated emission in GaN:Ge and GaN:Si has been observed with threshold optical power density as low as 0.4 MW/cm2. AlGaN photoconductors with cut-off wavelengths from 200 nm to 365 nm have been achieved for the first time. GaN p-n junction photovoltaic detector with very selective photoresponse have been demonstrated and theoretically modeled. Ti/AlN/Si metal-insulator-semiconductor capacitor with high capacitance-voltage performances at both low and high frequencies and low interface trap level density have been demonstrated for the first time in this material system.

Original languageEnglish (US)
Pages (from-to)2-11
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3179
DOIs
StatePublished - Dec 1 1997
EventSolid State Crystals in Optoelectronics and Semiconductor Technology - Zakopane, Poland
Duration: Oct 7 1996Oct 7 1996

Keywords

  • AlGaN photoconductors
  • AlGaN supperlattice
  • III-nitrides
  • Metal-insulator-semiconductor capacitor
  • Optical pumping
  • Photoluminescence
  • Si-doping
  • Stimulated emission
  • Ultraviolet photodetectors
  • X-ray rocking curve

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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