Recent advances in III-V compounds on silicon

M. Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

The performance of photonic and electronic devices fabricated with III-V compounds on silicon substrate has advanced to the degree that this technology may be considered for device applications. In this paper, the recent advances on the growth, characterization, and applications of III-V compounds on Si substrates using low pressure metalorganic chemical vapor deposition growth technique are presented.

Original languageEnglish (US)
Pages (from-to)21-37
Number of pages17
JournalProgress In Crystal Growth And Characterization
Volume19
Issue number1-2
DOIs
StatePublished - Jan 1 1989

ASJC Scopus subject areas

  • Engineering(all)

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