Recent advances in InAs/InAs1-xSbx/AlAs1-xSbx gap-engineered type-II superlattice-based photodetectors

Manijeh Razeghi, Abbas Haddadi, Arash Dehzangi, Romain Chevallier, Thomas Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations


InAs/InAs1-xSbx/AlAs1-xSbx type-II superlattices (T2SLs) is a system of multi-interacting quantum wells. Since its introduction, this material system has drawn a lot of attention especially for infrared detection. In recent years, InAs/InAs1- xSbx/AlAs1-xSbx T2SL material system has experienced incredible improvements in material quality, device structure designs and device fabrication process which elevated the performances of T2SL-based photodetectors to a comparable level to the state-of-the-art material systems for infrared detection such as Mercury Cadmium Telluride (MCT). In this paper, we will present the current status of InAs/InAs1-xSbx/AlAs1-xSbx T2SL-based photodetectors for detection in different infrared regions, from short-wavelength (SWIR) to long-wavelength (LWIR) infrared, and the future outlook of this material system.

Original languageEnglish (US)
Title of host publicationInfrared Technology and Applications XLIII
EditorsBjorn F. Andresen, Charles M. Hanson, John L. Miller, Paul R. Norton, Gabor F. Fulop
ISBN (Electronic)9781510608559
StatePublished - Jan 1 2017
EventInfrared Technology and Applications XLIII - Anaheim, United States
Duration: Apr 9 2017Apr 13 2017

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


OtherInfrared Technology and Applications XLIII
CountryUnited States

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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