@inproceedings{cf7f11de6653427fb887296aea8740d3,
title = "Recent advances in LWIR Type - II InAs/GaSb superlattice photodetectors and focal plane arrays at the Center for Quantum Devices",
abstract = "In recent years, Type-II InAs/GaSb superlattice photo-detectors have experienced significant improvements in material quality, structural designs, and imaging applications. They now appear to be a possible alternative to the state-of-the-art HgCdTe (MCT) technology in the long and very long wavelength infrared regimes. At the Center for Quantum Devices, we have successfully realized very high quantum efficiency, very high dynamic differential resistance R0A - product LWIR Type - II InAs/GaSb superlattice photodiodes with efficient surface passivation techniques. The demonstration of high quality LWIR Focal Plane Arrays that were 100 % fabricated in - house reaffirms the pioneer position of this university-based laboratory.",
keywords = "Focal plane array, GaSb, InAs, Infrared, Two - Color, Type-II",
author = "Manijeh Razeghi and Darin Hoffman and Nguyen, {Binh Minh} and Delaunay, {Pierre Yves} and Huang, {Edward Kwei Wei} and Tidrow, {Meimei Z.}",
year = "2008",
doi = "10.1117/12.782854",
language = "English (US)",
isbn = "9780819471314",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Infrared Technology and Applications XXXIV",
note = "Infrared Technology and Applications XXXIV ; Conference date: 17-03-2008 Through 20-03-2008",
}