Recent advances in LWIR Type - II InAs/GaSb superlattice photodetectors and focal plane arrays at the Center for Quantum Devices

Manijeh Razeghi*, Darin Hoffman, Binh Minh Nguyen, Pierre Yves Delaunay, Edward Kwei Wei Huang, Meimei Z. Tidrow

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

In recent years, Type-II InAs/GaSb superlattice photo-detectors have experienced significant improvements in material quality, structural designs, and imaging applications. They now appear to be a possible alternative to the state-of-the-art HgCdTe (MCT) technology in the long and very long wavelength infrared regimes. At the Center for Quantum Devices, we have successfully realized very high quantum efficiency, very high dynamic differential resistance R0A - product LWIR Type - II InAs/GaSb superlattice photodiodes with efficient surface passivation techniques. The demonstration of high quality LWIR Focal Plane Arrays that were 100 % fabricated in - house reaffirms the pioneer position of this university-based laboratory.

Original languageEnglish (US)
Title of host publicationInfrared Technology and Applications XXXIV
Volume6940
DOIs
StatePublished - Jun 26 2008
EventInfrared Technology and Applications XXXIV - Orlando, FL, United States
Duration: Mar 17 2008Mar 20 2008

Other

OtherInfrared Technology and Applications XXXIV
CountryUnited States
CityOrlando, FL
Period3/17/083/20/08

Keywords

  • Focal plane array
  • GaSb
  • InAs
  • Infrared
  • Two - Color
  • Type-II

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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