In recent years, Type-II InAs/GaSb superlattice photodetectors have experienced significant improvements in material quality, structural designs, and imaging applications. They now appear to be a possible alternative to the state-of-the-art HgCdTe (MCT) technology in the long (LWIR) and very long wavelength infrared regimes. At the Center for Quantum Devices, we have successfully realized very high quantum efficiency, very high dynamic differential resistance R0A-product LWIR Type-II InAs/GaSb superlattice photodiodes with efficient surface passivation techniques. The demonstration of high-quality LWIR focal plane arrays that were 100% fabricated in-house reaffirms the pioneer position of this university-based laboratory.
- Focal plane array
ASJC Scopus subject areas
- Electrical and Electronic Engineering