Recent advances in LWIR Type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the center for quantum devices

Manijeh Razeghi*, Darin Hoffman, Binh Minh Nguyen, Pierre Yves Delaunay, Edward Kwei Wei Huang, Meimei Z. Tidrow, Vaidya Nathan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

In recent years, Type-II InAs/GaSb superlattice photodetectors have experienced significant improvements in material quality, structural designs, and imaging applications. They now appear to be a possible alternative to the state-of-the-art HgCdTe (MCT) technology in the long (LWIR) and very long wavelength infrared regimes. At the Center for Quantum Devices, we have successfully realized very high quantum efficiency, very high dynamic differential resistance R0A-product LWIR Type-II InAs/GaSb superlattice photodiodes with efficient surface passivation techniques. The demonstration of high-quality LWIR focal plane arrays that were 100% fabricated in-house reaffirms the pioneer position of this university-based laboratory.

Original languageEnglish (US)
Article number4912389
Pages (from-to)1056-1066
Number of pages11
JournalProceedings of the IEEE
Volume97
Issue number6
DOIs
StatePublished - Jun 2009

Keywords

  • Focal plane array
  • GaSb
  • InAs
  • Infrared
  • Two-color
  • Type-II

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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