Recent advances in LWIR Type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the center for quantum devices

Manijeh Razeghi; Darin Hoffman; Binh Minh Nguyen; Pierre Yves Delaunay; Edward Kwei Wei Huang; Meimei Z. Tidrow; Vaidya Nathan

doi:10.1109/JPROC.2009.2017108

Recent advances in LWIR Type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the center for quantum devices

Manijeh Razeghi^*, Darin Hoffman, Binh Minh Nguyen, Pierre Yves Delaunay, Edward Kwei Wei Huang, Meimei Z. Tidrow, Vaidya Nathan

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

In recent years, Type-II InAs/GaSb superlattice photodetectors have experienced significant improvements in material quality, structural designs, and imaging applications. They now appear to be a possible alternative to the state-of-the-art HgCdTe (MCT) technology in the long (LWIR) and very long wavelength infrared regimes. At the Center for Quantum Devices, we have successfully realized very high quantum efficiency, very high dynamic differential resistance R0A-product LWIR Type-II InAs/GaSb superlattice photodiodes with efficient surface passivation techniques. The demonstration of high-quality LWIR focal plane arrays that were 100% fabricated in-house reaffirms the pioneer position of this university-based laboratory.

Original language	English (US)
Article number	4912389
Pages (from-to)	1056-1066
Number of pages	11
Journal	Proceedings of the IEEE
Volume	97
Issue number	6
DOIs	https://doi.org/10.1109/JPROC.2009.2017108
State	Published - Jun 2009

Keywords

Focal plane array
GaSb
InAs
Infrared
Two-color
Type-II

ASJC Scopus subject areas

Computer Science(all)
Electrical and Electronic Engineering

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10.1109/JPROC.2009.2017108

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@article{be1c1c3944b845e5a8de31f261a99dbb,

title = "Recent advances in LWIR Type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the center for quantum devices",

abstract = "In recent years, Type-II InAs/GaSb superlattice photodetectors have experienced significant improvements in material quality, structural designs, and imaging applications. They now appear to be a possible alternative to the state-of-the-art HgCdTe (MCT) technology in the long (LWIR) and very long wavelength infrared regimes. At the Center for Quantum Devices, we have successfully realized very high quantum efficiency, very high dynamic differential resistance R0A-product LWIR Type-II InAs/GaSb superlattice photodiodes with efficient surface passivation techniques. The demonstration of high-quality LWIR focal plane arrays that were 100% fabricated in-house reaffirms the pioneer position of this university-based laboratory.",

keywords = "Focal plane array, GaSb, InAs, Infrared, Two-color, Type-II",

author = "Manijeh Razeghi and Darin Hoffman and Nguyen, {Binh Minh} and Delaunay, {Pierre Yves} and Huang, {Edward Kwei Wei} and Tidrow, {Meimei Z.} and Vaidya Nathan",

year = "2009",

month = jun,

doi = "10.1109/JPROC.2009.2017108",

language = "English (US)",

volume = "97",

pages = "1056--1066",

journal = "Proceedings of the IEEE",

issn = "0018-9219",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Recent advances in LWIR Type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the center for quantum devices

AU - Razeghi, Manijeh

AU - Hoffman, Darin

AU - Nguyen, Binh Minh

AU - Delaunay, Pierre Yves

AU - Huang, Edward Kwei Wei

AU - Tidrow, Meimei Z.

AU - Nathan, Vaidya

PY - 2009/6

Y1 - 2009/6

N2 - In recent years, Type-II InAs/GaSb superlattice photodetectors have experienced significant improvements in material quality, structural designs, and imaging applications. They now appear to be a possible alternative to the state-of-the-art HgCdTe (MCT) technology in the long (LWIR) and very long wavelength infrared regimes. At the Center for Quantum Devices, we have successfully realized very high quantum efficiency, very high dynamic differential resistance R0A-product LWIR Type-II InAs/GaSb superlattice photodiodes with efficient surface passivation techniques. The demonstration of high-quality LWIR focal plane arrays that were 100% fabricated in-house reaffirms the pioneer position of this university-based laboratory.

AB - In recent years, Type-II InAs/GaSb superlattice photodetectors have experienced significant improvements in material quality, structural designs, and imaging applications. They now appear to be a possible alternative to the state-of-the-art HgCdTe (MCT) technology in the long (LWIR) and very long wavelength infrared regimes. At the Center for Quantum Devices, we have successfully realized very high quantum efficiency, very high dynamic differential resistance R0A-product LWIR Type-II InAs/GaSb superlattice photodiodes with efficient surface passivation techniques. The demonstration of high-quality LWIR focal plane arrays that were 100% fabricated in-house reaffirms the pioneer position of this university-based laboratory.

KW - Focal plane array

KW - GaSb

KW - InAs

KW - Infrared

KW - Two-color

KW - Type-II

UR - http://www.scopus.com/inward/record.url?scp=67349231203&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67349231203&partnerID=8YFLogxK

U2 - 10.1109/JPROC.2009.2017108

DO - 10.1109/JPROC.2009.2017108

M3 - Article

AN - SCOPUS:67349231203

SN - 0018-9219

VL - 97

SP - 1056

EP - 1066

JO - Proceedings of the IEEE

JF - Proceedings of the IEEE

IS - 6

M1 - 4912389

ER -

Recent advances in LWIR Type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the center for quantum devices

Abstract

Keywords

ASJC Scopus subject areas

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