Recent advances in MOCVD growth of InxGa1-xAsyP1-y alloys

M. Razeghi*, J. P. Duchemin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

The low pressure metalorganic chemical vapour deposition (LPMOCVD) growth of GaxIn1-xAsyP1-y-InP lattice matched system, with high mobilities, sharp interfaces, low background doping densities, and the formation of a two-dimensional electron gas (2DEG) at the interfaces, has recently made spectacular advances, as in evidenced by the availability of high quality DH lasers, PIN photodiodes, and Gunn diodes. We present here some new results obtained on the above-mentioned material and devices.

Original languageEnglish (US)
Pages (from-to)145-149
Number of pages5
JournalJournal of Crystal Growth
Volume70
Issue number1-2
DOIs
StatePublished - Dec 1984

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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