Recent Advances in Multi-Layer Light-Emitting Heterostructure Transistors

Hongming Chen; Wei Huang; Tobin J. Marks; Antonio Facchetti; Hong Meng

doi:10.1002/smll.202007661

Recent Advances in Multi-Layer Light-Emitting Heterostructure Transistors

Hongming Chen, Wei Huang, Tobin J. Marks, Antonio Facchetti, Hong Meng^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Review article › peer-review

22 Scopus citations

Abstract

Light-emitting transistors (LETs) have attracted tremendous academic and industrial interest due to their dual functions of electrical switching and light emission in a single device, which can considerably reduce system complexity and manufacturing costs, especially in the area of flat panel and flexible displays as well as lighting and lasers. In recent years, enhanced LET performance has been achieved by introducing multiple-layer heterostructures in the charge-carrying/light-emitting LET channel versus the best-reported performance in single active layer LETs, rendering multi-layer LETs promising candidates for next-generation display technologies. In this review, the fundamental structures and working principles of multi-layer heterostructure LETs are introduced. Next, developments in multi-layer LETs are discussed based on co-planar LETs, non-planar LETs, and vertical LETs including organic, quantum dot, and perovskite light emitters. Finally, this review concludes with a summary and a perspective on the future of this research field.

Original language	English (US)
Article number	2007661
Journal	Small
Volume	17
Issue number	13
DOIs	https://doi.org/10.1002/smll.202007661
State	Published - Apr 1 2021

Funding

This work was supported financially by the Key-Area Research and Development Program of Guangdong Province (2019B010924003, 2020B010178001), Shenzhen Science and Technology Research Grant (JCYJ20170412150946440, JCYJ20180302153514509, and JCYJ20170818090312652), Shenzhen Engineering Research Center (Shenzhen Development and Reform Commission ([2018]1410)), Natural Science Basic Research Program of Shaanxi (Program No. 2019JLP-11), and NSFC International Exchanges China Programme (Shenzhen-England, 51911530213). Research at Northwestern University was supported financially by the AFOSR (FA9550-18-1-0331), the Northwestern University MRSEC (NSF DMR-1720139), and Flexterra Corp. H.C. thanks the joint-Ph.D. program supported by the China Scholarship Council for a fellowship.

Keywords

light-emitting transistors
multi-layer devices
organic emitters
perovskites
quantum dots

ASJC Scopus subject areas

Biotechnology
General Chemistry
Biomaterials
General Materials Science
Engineering (miscellaneous)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1002/smll.202007661

Cite this

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title = "Recent Advances in Multi-Layer Light-Emitting Heterostructure Transistors",

abstract = "Light-emitting transistors (LETs) have attracted tremendous academic and industrial interest due to their dual functions of electrical switching and light emission in a single device, which can considerably reduce system complexity and manufacturing costs, especially in the area of flat panel and flexible displays as well as lighting and lasers. In recent years, enhanced LET performance has been achieved by introducing multiple-layer heterostructures in the charge-carrying/light-emitting LET channel versus the best-reported performance in single active layer LETs, rendering multi-layer LETs promising candidates for next-generation display technologies. In this review, the fundamental structures and working principles of multi-layer heterostructure LETs are introduced. Next, developments in multi-layer LETs are discussed based on co-planar LETs, non-planar LETs, and vertical LETs including organic, quantum dot, and perovskite light emitters. Finally, this review concludes with a summary and a perspective on the future of this research field.",

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author = "Hongming Chen and Wei Huang and Marks, \{Tobin J.\} and Antonio Facchetti and Hong Meng",

note = "Funding Information: This work was supported financially by the Key-Area Research and Development Program of Guangdong Province (2019B010924003, 2020B010178001), Shenzhen Science and Technology Research Grant (JCYJ20170412150946440, JCYJ20180302153514509, and JCYJ20170818090312652), Shenzhen Engineering Research Center (Shenzhen Development and Reform Commission ([2018]1410)), Natural Science Basic Research Program of Shaanxi (Program No. 2019JLP-11), and NSFC International Exchanges China Programme (Shenzhen-England, 51911530213). Research at Northwestern University was supported financially by the AFOSR (FA9550-18-1-0331), the Northwestern University MRSEC (NSF DMR-1720139), and Flexterra Corp. H.C. thanks the joint-Ph.D. program supported by the China Scholarship Council for a fellowship. Publisher Copyright: {\textcopyright} 2021 Wiley-VCH GmbH",

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N2 - Light-emitting transistors (LETs) have attracted tremendous academic and industrial interest due to their dual functions of electrical switching and light emission in a single device, which can considerably reduce system complexity and manufacturing costs, especially in the area of flat panel and flexible displays as well as lighting and lasers. In recent years, enhanced LET performance has been achieved by introducing multiple-layer heterostructures in the charge-carrying/light-emitting LET channel versus the best-reported performance in single active layer LETs, rendering multi-layer LETs promising candidates for next-generation display technologies. In this review, the fundamental structures and working principles of multi-layer heterostructure LETs are introduced. Next, developments in multi-layer LETs are discussed based on co-planar LETs, non-planar LETs, and vertical LETs including organic, quantum dot, and perovskite light emitters. Finally, this review concludes with a summary and a perspective on the future of this research field.

AB - Light-emitting transistors (LETs) have attracted tremendous academic and industrial interest due to their dual functions of electrical switching and light emission in a single device, which can considerably reduce system complexity and manufacturing costs, especially in the area of flat panel and flexible displays as well as lighting and lasers. In recent years, enhanced LET performance has been achieved by introducing multiple-layer heterostructures in the charge-carrying/light-emitting LET channel versus the best-reported performance in single active layer LETs, rendering multi-layer LETs promising candidates for next-generation display technologies. In this review, the fundamental structures and working principles of multi-layer heterostructure LETs are introduced. Next, developments in multi-layer LETs are discussed based on co-planar LETs, non-planar LETs, and vertical LETs including organic, quantum dot, and perovskite light emitters. Finally, this review concludes with a summary and a perspective on the future of this research field.

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Recent Advances in Multi-Layer Light-Emitting Heterostructure Transistors

Abstract

Funding

Keywords

ASJC Scopus subject areas

UN SDGs

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