In this paper, we will review the work on Sb-based mid-infrared laser diodes. The structures investigated in this work are InAsSbP based double heterojunction (DH) and multiquantum well (MQW) structures grown by LP-MOCVD. The parameters of the structures are optimized through theoretical calculation and device testing. The high performance of the laser diodes emitting in the 3 to 5 μm has been achieved.
|Original language||English (US)|
|Number of pages||11|
|State||Published - Jan 1 1998|
ASJC Scopus subject areas
- Materials Science(all)
- Electrical and Electronic Engineering