Recent development in Sb-based MWIR interband laser diodes

D. Wu; M. Razeghi

Recent development in Sb-based MWIR interband laser diodes

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, we will review the work on Sb-based mid-infrared laser diodes. The structures investigated in this work are InAsSbP based double heterojunction (DH) and multiquantum well (MQW) structures grown by LP-MOCVD. The parameters of the structures are optimized through theoretical calculation and device testing. The high performance of the laser diodes emitting in the 3 to 5 μm has been achieved.

Original language	English (US)
Pages (from-to)	195-205
Number of pages	11
Journal	Opto-electronics Review
Volume	1998
Issue number	3
State	Published - Jan 1 1998

ASJC Scopus subject areas

Radiation
Materials Science(all)
Electrical and Electronic Engineering

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abstract = "In this paper, we will review the work on Sb-based mid-infrared laser diodes. The structures investigated in this work are InAsSbP based double heterojunction (DH) and multiquantum well (MQW) structures grown by LP-MOCVD. The parameters of the structures are optimized through theoretical calculation and device testing. The high performance of the laser diodes emitting in the 3 to 5 μm has been achieved.",

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