Recent development in Sb-based MWIR interband laser diodes

D. Wu*, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, we will review the work on Sb-based mid-infrared laser diodes. The structures investigated in this work are InAsSbP based double heterojunction (DH) and multiquantum well (MQW) structures grown by LP-MOCVD. The parameters of the structures are optimized through theoretical calculation and device testing. The high performance of the laser diodes emitting in the 3 to 5 μm has been achieved.

Original languageEnglish (US)
Pages (from-to)195-205
Number of pages11
JournalOpto-electronics Review
Volume1998
Issue number3
StatePublished - Jan 1 1998

ASJC Scopus subject areas

  • Radiation
  • Materials Science(all)
  • Electrical and Electronic Engineering

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