Abstract
In this paper, we will review the work on Sb-based mid-infrared laser diodes. The structures investigated in this work are InAsSbP based double heterojunction (DH) and multiquantum well (MQW) structures grown by LP-MOCVD. The parameters of the structures are optimized through theoretical calculation and device testing. The high performance of the laser diodes emitting in the 3 to 5 μm has been achieved.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 195-205 |
| Number of pages | 11 |
| Journal | Opto-electronics Review |
| Volume | 1998 |
| Issue number | 3 |
| State | Published - Jan 1 1998 |
ASJC Scopus subject areas
- Radiation
- Materials Science(all)
- Electrical and Electronic Engineering