Results of excitation density and temperature dependent photoluminescence experiments on In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterostructures grown by LP-MOCVD are reported. The samples show a two dimensional electron gas at the interface. The energetic position of the luminescence is shifted by 10-20 meV towards lower energy with respect to the 3D band gap and shifts to higher energy with increasing excitation density. A novel interface recombination process which is indirect in r-space can account for the observations.
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