Recombination of carriers confined at In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP interfaces

Dieter Bimberg; Richard Bauer; Detlef Oertel; Jerzy Mycielski; Karl Heinz Goetz; Manijeh Razeghi

doi:10.1016/0378-4363(85)90378-X

Recombination of carriers confined at In_0.53Ga_0.47As/InP and In_0.75Ga_0.25As_0.5P_0.5/InP interfaces

Dieter Bimberg^*, Richard Bauer, Detlef Oertel, Jerzy Mycielski, Karl Heinz Goetz, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Results of excitation density and temperature dependent photoluminescence experiments on In_0.53Ga_0.47As/InP and In_0.75Ga_0.25As_0.5P_0.5/InP heterostructures grown by LP-MOCVD are reported. The samples show a two dimensional electron gas at the interface. The energetic position of the luminescence is shifted by 10-20 meV towards lower energy with respect to the 3D band gap and shifts to higher energy with increasing excitation density. A novel interface recombination process which is indirect in r-space can account for the observations.

Original language	English (US)
Pages (from-to)	399-402
Number of pages	4
Journal	Physica B+C
Volume	134
Issue number	1-3
DOIs	https://doi.org/10.1016/0378-4363(85)90378-X
State	Published - Nov 1985

ASJC Scopus subject areas

General Engineering

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title = "Recombination of carriers confined at In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP interfaces",

abstract = "Results of excitation density and temperature dependent photoluminescence experiments on In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterostructures grown by LP-MOCVD are reported. The samples show a two dimensional electron gas at the interface. The energetic position of the luminescence is shifted by 10-20 meV towards lower energy with respect to the 3D band gap and shifts to higher energy with increasing excitation density. A novel interface recombination process which is indirect in r-space can account for the observations.",

author = "Dieter Bimberg and Richard Bauer and Detlef Oertel and Jerzy Mycielski and Goetz, {Karl Heinz} and Manijeh Razeghi",

year = "1985",

month = nov,

doi = "10.1016/0378-4363(85)90378-X",

language = "English (US)",

volume = "134",

pages = "399--402",

journal = "Physica B+C",

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T1 - Recombination of carriers confined at In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP interfaces

AU - Bimberg, Dieter

AU - Bauer, Richard

AU - Oertel, Detlef

AU - Mycielski, Jerzy

AU - Goetz, Karl Heinz

AU - Razeghi, Manijeh

PY - 1985/11

Y1 - 1985/11

N2 - Results of excitation density and temperature dependent photoluminescence experiments on In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterostructures grown by LP-MOCVD are reported. The samples show a two dimensional electron gas at the interface. The energetic position of the luminescence is shifted by 10-20 meV towards lower energy with respect to the 3D band gap and shifts to higher energy with increasing excitation density. A novel interface recombination process which is indirect in r-space can account for the observations.

AB - Results of excitation density and temperature dependent photoluminescence experiments on In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterostructures grown by LP-MOCVD are reported. The samples show a two dimensional electron gas at the interface. The energetic position of the luminescence is shifted by 10-20 meV towards lower energy with respect to the 3D band gap and shifts to higher energy with increasing excitation density. A novel interface recombination process which is indirect in r-space can account for the observations.

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ER -

Recombination of carriers confined at In_0.53Ga_0.47As/InP and In_0.75Ga_0.25As_0.5P_0.5/InP interfaces

Abstract

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