Recombination of carriers confined at In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP interfaces

Dieter Bimberg*, Richard Bauer, Detlef Oertel, Jerzy Mycielski, Karl Heinz Goetz, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Results of excitation density and temperature dependent photoluminescence experiments on In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterostructures grown by LP-MOCVD are reported. The samples show a two dimensional electron gas at the interface. The energetic position of the luminescence is shifted by 10-20 meV towards lower energy with respect to the 3D band gap and shifts to higher energy with increasing excitation density. A novel interface recombination process which is indirect in r-space can account for the observations.

Original languageEnglish (US)
Pages (from-to)399-402
Number of pages4
JournalPhysica B+C
Issue number1-3
StatePublished - Nov 1985

ASJC Scopus subject areas

  • General Engineering


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