Region-of-interest microtomography for component inspection

Andrew R. Kalukin*, Denis T. Keane, Wayne G. Roberge

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The authors describe a novel technique for the nondestructive evaluation of microelectronic components using Xray microtomography. Existing microtomography systems have spatial resolution of order 1 -4im but require X-ray source brilliance that would become unachievable at higher resolutions. The authors describe an imaging method that reduces the number of X-ray photons required from the source without degrading the resolution. The feasibility of the technique is demonstrated through a series of computer simulations. The results are verified with real data from synchrotron experiments.

Original languageEnglish (US)
Pages (from-to)36-41
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume46
Issue number1
DOIs
StatePublished - 1999

Funding

Manuscript received June 2, 1998; revised October 19, 1998. This work was supported in part by grants to Rensselaer by IBM and the Semiconductor Research Corporation. A. R. Kalukin and W. G. Roberge are with Rensselaer Polytechnic Institute, Troy, NY 12180 USA (e-mail: [email protected]). D. T. Keane is with DND-CAT Synchrotron Research Center, Argonne, IL 6043 USA. Publisher Item Identifier S 0018-9499(99)02189-9.

Keywords

  • Component inspection
  • Imaging
  • Inspection
  • Microelectronics
  • Microtomography
  • Quality control
  • X rays

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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