Reinforced self-assembled nanodielectrics for high-performance transparent thin film transistors

Jun Liu, Jonathan W. Hennek, D. Bruce Buchholz, Young Geun Ha, Sujing Xie, Vinayak P Dravid, R P H Chang, Antonio Facchetti, Tobin Jay Marks

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


Reinforced self-assembled nano-dielectrics (R-SANDs) are fabricated by depositing a thin protective layer on high-capacitance SAND films, thus significantly improving SAND durability and expanding SAND compatibility with a broader range of semiconductor deposition techniques. Fully transparent TFTs with excellent field-effect mobilities â-140 cm 2 / V·s and low operating voltages â-1.0 V are demonstrated by combining the R-SAND and an amorphous Zn-In-Sn-O transparent oxide semiconductor.

Original languageEnglish (US)
Pages (from-to)992-997
Number of pages6
JournalAdvanced Materials
Issue number8
StatePublished - Feb 22 2011


  • amorphous oxide
  • dielectric materials
  • hybrid materials
  • self-assembly
  • transparent thin-film transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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