Abstract
Reinforced self-assembled nano-dielectrics (R-SANDs) are fabricated by depositing a thin protective layer on high-capacitance SAND films, thus significantly improving SAND durability and expanding SAND compatibility with a broader range of semiconductor deposition techniques. Fully transparent TFTs with excellent field-effect mobilities â-140 cm2/ V·s and low operating voltages â-1.0 V are demonstrated by combining the R-SAND and an amorphous Zn-In-Sn-O transparent oxide semiconductor.
Original language | English (US) |
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Pages (from-to) | 992-997 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 23 |
Issue number | 8 |
DOIs | |
State | Published - Feb 22 2011 |
Keywords
- amorphous oxide
- dielectric materials
- hybrid materials
- self-assembly
- transparent thin-film transistors
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering