Reinforced self-assembled nanodielectrics for high-performance transparent thin film transistors

Jun Liu; Jonathan W. Hennek; D. Bruce Buchholz; Young Geun Ha; Sujing Xie; Vinayak P. Dravid; Robert P.H. Chang; Antonio Facchetti; Tobin J. Marks

doi:10.1002/adma.201004198

Reinforced self-assembled nanodielectrics for high-performance transparent thin film transistors

Jun Liu, Jonathan W. Hennek, D. Bruce Buchholz, Young Geun Ha, Sujing Xie, Vinayak P. Dravid, Robert P.H. Chang, Antonio Facchetti, Tobin J. Marks

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Reinforced self-assembled nano-dielectrics (R-SANDs) are fabricated by depositing a thin protective layer on high-capacitance SAND films, thus significantly improving SAND durability and expanding SAND compatibility with a broader range of semiconductor deposition techniques. Fully transparent TFTs with excellent field-effect mobilities â-140 cm²/ VÂ·s and low operating voltages â-1.0 V are demonstrated by combining the R-SAND and an amorphous Zn-In-Sn-O transparent oxide semiconductor.

Original language	English (US)
Pages (from-to)	992-997
Number of pages	6
Journal	Advanced Materials
Volume	23
Issue number	8
DOIs	https://doi.org/10.1002/adma.201004198
State	Published - Feb 22 2011

Keywords

amorphous oxide
dielectric materials
hybrid materials
self-assembly
transparent thin-film transistors

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201004198

Cite this

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abstract = "Reinforced self-assembled nano-dielectrics (R-SANDs) are fabricated by depositing a thin protective layer on high-capacitance SAND films, thus significantly improving SAND durability and expanding SAND compatibility with a broader range of semiconductor deposition techniques. Fully transparent TFTs with excellent field-effect mobilities {\^a}-140 cm2/ V{\^A}·s and low operating voltages {\^a}-1.0 V are demonstrated by combining the R-SAND and an amorphous Zn-In-Sn-O transparent oxide semiconductor.",

keywords = "amorphous oxide, dielectric materials, hybrid materials, self-assembly, transparent thin-film transistors",

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T1 - Reinforced self-assembled nanodielectrics for high-performance transparent thin film transistors

AU - Liu, Jun

AU - Hennek, Jonathan W.

AU - Buchholz, D. Bruce

AU - Ha, Young Geun

AU - Xie, Sujing

AU - Dravid, Vinayak P.

AU - Chang, Robert P.H.

AU - Facchetti, Antonio

AU - Marks, Tobin J.

PY - 2011/2/22

Y1 - 2011/2/22

N2 - Reinforced self-assembled nano-dielectrics (R-SANDs) are fabricated by depositing a thin protective layer on high-capacitance SAND films, thus significantly improving SAND durability and expanding SAND compatibility with a broader range of semiconductor deposition techniques. Fully transparent TFTs with excellent field-effect mobilities â-140 cm2/ VÂ·s and low operating voltages â-1.0 V are demonstrated by combining the R-SAND and an amorphous Zn-In-Sn-O transparent oxide semiconductor.

AB - Reinforced self-assembled nano-dielectrics (R-SANDs) are fabricated by depositing a thin protective layer on high-capacitance SAND films, thus significantly improving SAND durability and expanding SAND compatibility with a broader range of semiconductor deposition techniques. Fully transparent TFTs with excellent field-effect mobilities â-140 cm2/ VÂ·s and low operating voltages â-1.0 V are demonstrated by combining the R-SAND and an amorphous Zn-In-Sn-O transparent oxide semiconductor.

KW - amorphous oxide

KW - dielectric materials

KW - hybrid materials

KW - self-assembly

KW - transparent thin-film transistors

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Reinforced self-assembled nanodielectrics for high-performance transparent thin film transistors

Abstract

Keywords

ASJC Scopus subject areas

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