Relation between phase stability and mechanical defects in InGa(Al)As/GaAs and ZnSe/GaAs heterostructures under pressure

T. M. Ritter*, B. A. Weinstein, H. M. Kim, C. R. Wie, K. Stair, C. Choi-Feng, M. Funato

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We report pressure-Raman experiments on elastically metastable heterostructures from two systems: (i) InxY1 - xAs epilayers and InxY1 - xAs/GaAs multilayers (Y = Ga or Al; x ≅ 0.5) grown on GaAs or InP substrates; (ii) ZnSe epilayers and ZnSe/GaAs multilayers grown on GaAs. The LO(Γ) phonon frequencies are measured for pressure up to the α-β phase transitions in the various constituents. Several samples exhibit pressure-induced relaxation of the internal strain due either to formation of interface dislocations or to structural fluctuations antecedent to an α-β transition. Superpressing is observed for the InxAl1 - xAs α-β transition in the multilayers, but it is not apparent for the ZnSe transition in our samples. A correspondence between the formation of dislocations and the absence of superpressing is discussed.

Original languageEnglish (US)
Pages (from-to)607-613
Number of pages7
JournalJournal of Physics and Chemistry of Solids
Volume56
Issue number3-4
DOIs
StatePublished - Jan 1 1995

Keywords

  • A. semiconductors
  • B. epitaxial growth
  • C. high pressure
  • D. phase transitions
  • D. phonons

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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