Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes

C. Bayram*, Z. Vashaei, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

66 Scopus citations

Abstract

AlGaN/GaN resonant tunneling diodes (RTDs), consisting of 20% (10%) aluminum-content in double-barrier (DB) active layer, were grown by metal-organic chemical vapor deposition on freestanding polar (c-plane) and nonpolar (m-plane) GaN substrates. RTDs were fabricated into 35-μm -diameter devices for electrical characterization. Lower aluminum content in the DB active layer and minimization of dislocations and polarization fields increased the reliability and reproducibility of room-temperature negative differential resistance (NDR). Polar RTDs showed decaying NDR behavior, whereas nonpolar ones did not significantly. Averaging over 50 measurements, nonpolar RTDs demonstrated a NDR of 67 , a current-peak-to-valley ratio of 1.08, and an average oscillator output power of 0.52 mW.

Original languageEnglish (US)
Article number181109
JournalApplied Physics Letters
Volume97
Issue number18
DOIs
StatePublished - Nov 1 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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