Reliability of aluminum-free 808 nm high-power laser diodes with uncoated mirrors

I. Eliashevich; J. Diaz; H. Yi; L. Wang; M. Razeghi

doi:10.1063/1.113404

Reliability of aluminum-free 808 nm high-power laser diodes with uncoated mirrors

I. Eliashevich^*, J. Diaz, H. Yi, L. Wang, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The reliability of uncoated InGaAsP/GaAs high-power diode lasers emitting at 808 nm wavelength has been studied. 47 W of quasicontinuous wave output power (pulse width 200 μs, frequency 20 Hz) have been obtained from a 1-cm-wide laser bar. A single-stripe diode without mirror coating has been life tested at 40°C for emitting power of 800 mW continuous wave (cw) and showed no noticeable degradation and no change of the lasing wavelength after 6000 h of operation.

Original language	English (US)
Number of pages	1
Journal	Applied Physics Letters
Volume	66
DOIs	https://doi.org/10.1063/1.113404
State	Published - Jan 1 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Reliability of aluminum-free 808 nm high-power laser diodes with uncoated mirrors",

abstract = "The reliability of uncoated InGaAsP/GaAs high-power diode lasers emitting at 808 nm wavelength has been studied. 47 W of quasicontinuous wave output power (pulse width 200 μs, frequency 20 Hz) have been obtained from a 1-cm-wide laser bar. A single-stripe diode without mirror coating has been life tested at 40°C for emitting power of 800 mW continuous wave (cw) and showed no noticeable degradation and no change of the lasing wavelength after 6000 h of operation.",

author = "I. Eliashevich and J. Diaz and H. Yi and L. Wang and M. Razeghi",

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AU - Eliashevich, I.

AU - Diaz, J.

AU - Yi, H.

AU - Wang, L.

AU - Razeghi, M.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - The reliability of uncoated InGaAsP/GaAs high-power diode lasers emitting at 808 nm wavelength has been studied. 47 W of quasicontinuous wave output power (pulse width 200 μs, frequency 20 Hz) have been obtained from a 1-cm-wide laser bar. A single-stripe diode without mirror coating has been life tested at 40°C for emitting power of 800 mW continuous wave (cw) and showed no noticeable degradation and no change of the lasing wavelength after 6000 h of operation.

AB - The reliability of uncoated InGaAsP/GaAs high-power diode lasers emitting at 808 nm wavelength has been studied. 47 W of quasicontinuous wave output power (pulse width 200 μs, frequency 20 Hz) have been obtained from a 1-cm-wide laser bar. A single-stripe diode without mirror coating has been life tested at 40°C for emitting power of 800 mW continuous wave (cw) and showed no noticeable degradation and no change of the lasing wavelength after 6000 h of operation.

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