Remarkable enhancement of hole transport in top-Gated N-Type polymer field- Effect transistors by a high-K dielectric for ambipolar electronic circuits

Kang Jun Baeg; Dongyoon Khim; Soon Won Jung; Minji Kang; In Kyu You; Dong Yu Kim; Antonio Facchetti; Yong Young Noh

doi:10.1002/adma.201201464

Remarkable enhancement of hole transport in top-Gated N-Type polymer field- Effect transistors by a high-K dielectric for ambipolar electronic circuits

Kang Jun Baeg^*, Dongyoon Khim, Soon Won Jung, Minji Kang, In Kyu You, Dong Yu Kim, Antonio Facchetti, Yong Young Noh

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

180 Scopus citations

Abstract

A remarkable enhancement of p-channel properties is achieved in initially n-channel dominant ambipolar P(NDI2OD-T2) organic field-effect transistors (OFETs) by the use of the fluorinated high-k dielectric P(VDF-TrFE). An almost two orders of magnitude increase in hole mobility (∼0.11 cm² V^-1 s^-1) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high-performance complementary-like inverters and ring oscillator circuits.

Original language	English (US)
Pages (from-to)	5433-5439
Number of pages	7
Journal	Advanced Materials
Volume	24
Issue number	40
DOIs	https://doi.org/10.1002/adma.201201464
State	Published - Oct 23 2012

Keywords

P(VDF-TrFE)
ambipolarity
charge transport
conjugated polymers
dielectric
organic complementary circuit
organic field-effect transistors

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
General Materials Science

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10.1002/adma.201201464

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title = "Remarkable enhancement of hole transport in top-Gated N-Type polymer field- Effect transistors by a high-K dielectric for ambipolar electronic circuits",

abstract = "A remarkable enhancement of p-channel properties is achieved in initially n-channel dominant ambipolar P(NDI2OD-T2) organic field-effect transistors (OFETs) by the use of the fluorinated high-k dielectric P(VDF-TrFE). An almost two orders of magnitude increase in hole mobility (∼0.11 cm2 V-1 s-1) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high-performance complementary-like inverters and ring oscillator circuits.",

keywords = "P(VDF-TrFE), ambipolarity, charge transport, conjugated polymers, dielectric, organic complementary circuit, organic field-effect transistors",

author = "Baeg, {Kang Jun} and Dongyoon Khim and Jung, {Soon Won} and Minji Kang and You, {In Kyu} and Kim, {Dong Yu} and Antonio Facchetti and Noh, {Yong Young}",

year = "2012",

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doi = "10.1002/adma.201201464",

language = "English (US)",

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journal = "Advanced Materials",

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T1 - Remarkable enhancement of hole transport in top-Gated N-Type polymer field- Effect transistors by a high-K dielectric for ambipolar electronic circuits

AU - Baeg, Kang Jun

AU - Khim, Dongyoon

AU - Jung, Soon Won

AU - Kang, Minji

AU - You, In Kyu

AU - Kim, Dong Yu

AU - Facchetti, Antonio

AU - Noh, Yong Young

PY - 2012/10/23

Y1 - 2012/10/23

N2 - A remarkable enhancement of p-channel properties is achieved in initially n-channel dominant ambipolar P(NDI2OD-T2) organic field-effect transistors (OFETs) by the use of the fluorinated high-k dielectric P(VDF-TrFE). An almost two orders of magnitude increase in hole mobility (∼0.11 cm2 V-1 s-1) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high-performance complementary-like inverters and ring oscillator circuits.

AB - A remarkable enhancement of p-channel properties is achieved in initially n-channel dominant ambipolar P(NDI2OD-T2) organic field-effect transistors (OFETs) by the use of the fluorinated high-k dielectric P(VDF-TrFE). An almost two orders of magnitude increase in hole mobility (∼0.11 cm2 V-1 s-1) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high-performance complementary-like inverters and ring oscillator circuits.

KW - P(VDF-TrFE)

KW - ambipolarity

KW - charge transport

KW - conjugated polymers

KW - dielectric

KW - organic complementary circuit

KW - organic field-effect transistors

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DO - 10.1002/adma.201201464

M3 - Article

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SN - 0935-9648

VL - 24

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EP - 5439

JO - Advanced Materials

JF - Advanced Materials

IS - 40

ER -

Remarkable enhancement of hole transport in top-Gated N-Type polymer field- Effect transistors by a high-K dielectric for ambipolar electronic circuits

Abstract

Keywords

ASJC Scopus subject areas

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