Remarkable enhancement of hole transport in top-Gated N-Type polymer field- Effect transistors by a high-K dielectric for ambipolar electronic circuits

Keyphrases

• Electronic Circuit 100%
• Hole Transport 100%
• Top Gate 100%
• High-k Dielectric 100%
• Polymer Field-effect Transistors 100%
• N-type Polymers 100%
• Ambipolar Electronics 100%
• Order of Magnitude 50%
• High Performance 50%
• Strong Interface 50%
• Interface Modification 50%
• Fluorinated 50%
• P(VDF-TrFE) 50%
• Hole Mobility 50%
• Organic Field-effect Transistors 50%
• N-channel 50%
• P-channel 50%
• Ambipolar 50%
• Channel Properties 50%
• Semiconductor-dielectric Interface 50%
• P(NDI2OD-T2) 50%
• Complementary Inverter 50%
• Ring Oscillator Circuit 50%

Material Science

• Field Effect Transistors 100%
• Electronic Circuit 100%
• High-K Dielectric 100%
• Organic Field Effect Transistors 50%
• Dielectric-Semiconductor Interface 50%
• Oscillator 50%
• Hole Mobility 50%
• Dielectric Material 50%