TY - JOUR
T1 - Remarkable Strength Characteristics of Defect-Free SiGe/Si Heterostructures Obtained by Ge Condensation
AU - David, Thomas
AU - Liu, Kailang
AU - Fernandez, Sara
AU - Richard, Marie Ingrid
AU - Ronda, Antoine
AU - Favre, Luc
AU - Abbarchi, Marco
AU - Benkouider, Abdelmalek
AU - Aqua, Jean Noël
AU - Peters, Matthew
AU - Voorhees, Peter
AU - Thomas, Olivier
AU - Berbezier, Isabelle
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/9/15
Y1 - 2016/9/15
N2 - We compare the morphological and structural features of SiGe membranes fabricated by three different processes: direct deposition of Si0.5Ge0.5 on Si(001) nominal substrate, direct deposition of Si0.5Ge0.5 on silicon on insulator, and deposition of SiGe with low Ge concentration on silicon on insulator followed by Ge enrichment by condensation. We show that the formation of fully strained Ge-rich layers free of defects with a flat surface is possible only by the two-step epitaxy-condensation process. We demonstrate that the condensation-based process enables the total inhibition of the morphological instability, together with the hindering of dislocations for critical thickness much greater than those commonly obtained by direct deposition. Those behaviors could be explained by the injection of self-interstitials in the Ge-rich layers during condensation. Such remarkable properties could be generalized to many other systems using a similar condensation process.
AB - We compare the morphological and structural features of SiGe membranes fabricated by three different processes: direct deposition of Si0.5Ge0.5 on Si(001) nominal substrate, direct deposition of Si0.5Ge0.5 on silicon on insulator, and deposition of SiGe with low Ge concentration on silicon on insulator followed by Ge enrichment by condensation. We show that the formation of fully strained Ge-rich layers free of defects with a flat surface is possible only by the two-step epitaxy-condensation process. We demonstrate that the condensation-based process enables the total inhibition of the morphological instability, together with the hindering of dislocations for critical thickness much greater than those commonly obtained by direct deposition. Those behaviors could be explained by the injection of self-interstitials in the Ge-rich layers during condensation. Such remarkable properties could be generalized to many other systems using a similar condensation process.
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U2 - 10.1021/acs.jpcc.6b06037
DO - 10.1021/acs.jpcc.6b06037
M3 - Article
AN - SCOPUS:84988014582
SN - 1932-7447
VL - 120
SP - 20333
EP - 20340
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 36
ER -