Remarkable Strength Characteristics of Defect-Free SiGe/Si Heterostructures Obtained by Ge Condensation

Thomas David; Kailang Liu; Sara Fernandez; Marie Ingrid Richard; Antoine Ronda; Luc Favre; Marco Abbarchi; Abdelmalek Benkouider; Jean Noël Aqua; Matthew Peters; Peter Voorhees; Olivier Thomas; Isabelle Berbezier

doi:10.1021/acs.jpcc.6b06037

Remarkable Strength Characteristics of Defect-Free SiGe/Si Heterostructures Obtained by Ge Condensation

Thomas David^*, Kailang Liu, Sara Fernandez, Marie Ingrid Richard, Antoine Ronda, Luc Favre, Marco Abbarchi, Abdelmalek Benkouider, Jean Noël Aqua, Matthew Peters, Peter Voorhees, Olivier Thomas, Isabelle Berbezier

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We compare the morphological and structural features of SiGe membranes fabricated by three different processes: direct deposition of Si_0.5Ge_0.5 on Si(001) nominal substrate, direct deposition of Si_0.5Ge_0.5 on silicon on insulator, and deposition of SiGe with low Ge concentration on silicon on insulator followed by Ge enrichment by condensation. We show that the formation of fully strained Ge-rich layers free of defects with a flat surface is possible only by the two-step epitaxy-condensation process. We demonstrate that the condensation-based process enables the total inhibition of the morphological instability, together with the hindering of dislocations for critical thickness much greater than those commonly obtained by direct deposition. Those behaviors could be explained by the injection of self-interstitials in the Ge-rich layers during condensation. Such remarkable properties could be generalized to many other systems using a similar condensation process.

Original language	English (US)
Pages (from-to)	20333-20340
Number of pages	8
Journal	Journal of Physical Chemistry C
Volume	120
Issue number	36
DOIs	https://doi.org/10.1021/acs.jpcc.6b06037
State	Published - Sep 15 2016

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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10.1021/acs.jpcc.6b06037

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David, T., Liu, K., Fernandez, S., Richard, M. I., Ronda, A., Favre, L., Abbarchi, M., Benkouider, A., Aqua, J. N., Peters, M., Voorhees, P., Thomas, O., & Berbezier, I. (2016). Remarkable Strength Characteristics of Defect-Free SiGe/Si Heterostructures Obtained by Ge Condensation. Journal of Physical Chemistry C, 120(36), 20333-20340. https://doi.org/10.1021/acs.jpcc.6b06037

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title = "Remarkable Strength Characteristics of Defect-Free SiGe/Si Heterostructures Obtained by Ge Condensation",

abstract = "We compare the morphological and structural features of SiGe membranes fabricated by three different processes: direct deposition of Si0.5Ge0.5 on Si(001) nominal substrate, direct deposition of Si0.5Ge0.5 on silicon on insulator, and deposition of SiGe with low Ge concentration on silicon on insulator followed by Ge enrichment by condensation. We show that the formation of fully strained Ge-rich layers free of defects with a flat surface is possible only by the two-step epitaxy-condensation process. We demonstrate that the condensation-based process enables the total inhibition of the morphological instability, together with the hindering of dislocations for critical thickness much greater than those commonly obtained by direct deposition. Those behaviors could be explained by the injection of self-interstitials in the Ge-rich layers during condensation. Such remarkable properties could be generalized to many other systems using a similar condensation process.",

author = "Thomas David and Kailang Liu and Sara Fernandez and Richard, {Marie Ingrid} and Antoine Ronda and Luc Favre and Marco Abbarchi and Abdelmalek Benkouider and Aqua, {Jean No{\"e}l} and Matthew Peters and Peter Voorhees and Olivier Thomas and Isabelle Berbezier",

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doi = "10.1021/acs.jpcc.6b06037",

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David, T, Liu, K, Fernandez, S, Richard, MI, Ronda, A, Favre, L, Abbarchi, M, Benkouider, A, Aqua, JN, Peters, M, Voorhees, P, Thomas, O & Berbezier, I 2016, 'Remarkable Strength Characteristics of Defect-Free SiGe/Si Heterostructures Obtained by Ge Condensation', Journal of Physical Chemistry C, vol. 120, no. 36, pp. 20333-20340. https://doi.org/10.1021/acs.jpcc.6b06037

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T1 - Remarkable Strength Characteristics of Defect-Free SiGe/Si Heterostructures Obtained by Ge Condensation

AU - David, Thomas

AU - Liu, Kailang

AU - Fernandez, Sara

AU - Richard, Marie Ingrid

AU - Ronda, Antoine

AU - Favre, Luc

AU - Abbarchi, Marco

AU - Benkouider, Abdelmalek

AU - Aqua, Jean Noël

AU - Peters, Matthew

AU - Voorhees, Peter

AU - Thomas, Olivier

AU - Berbezier, Isabelle

PY - 2016/9/15

Y1 - 2016/9/15

N2 - We compare the morphological and structural features of SiGe membranes fabricated by three different processes: direct deposition of Si0.5Ge0.5 on Si(001) nominal substrate, direct deposition of Si0.5Ge0.5 on silicon on insulator, and deposition of SiGe with low Ge concentration on silicon on insulator followed by Ge enrichment by condensation. We show that the formation of fully strained Ge-rich layers free of defects with a flat surface is possible only by the two-step epitaxy-condensation process. We demonstrate that the condensation-based process enables the total inhibition of the morphological instability, together with the hindering of dislocations for critical thickness much greater than those commonly obtained by direct deposition. Those behaviors could be explained by the injection of self-interstitials in the Ge-rich layers during condensation. Such remarkable properties could be generalized to many other systems using a similar condensation process.

AB - We compare the morphological and structural features of SiGe membranes fabricated by three different processes: direct deposition of Si0.5Ge0.5 on Si(001) nominal substrate, direct deposition of Si0.5Ge0.5 on silicon on insulator, and deposition of SiGe with low Ge concentration on silicon on insulator followed by Ge enrichment by condensation. We show that the formation of fully strained Ge-rich layers free of defects with a flat surface is possible only by the two-step epitaxy-condensation process. We demonstrate that the condensation-based process enables the total inhibition of the morphological instability, together with the hindering of dislocations for critical thickness much greater than those commonly obtained by direct deposition. Those behaviors could be explained by the injection of self-interstitials in the Ge-rich layers during condensation. Such remarkable properties could be generalized to many other systems using a similar condensation process.

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Remarkable Strength Characteristics of Defect-Free SiGe/Si Heterostructures Obtained by Ge Condensation

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