Reply to "Comment on 'Semimetal-to-semiconductor transition in bismuth thin films'"

C. A. Hoffman; J. R. Meyer; F. J. Bartoli; A. Di Venere; X. J. Yi; C. L. Hou; H. C. Wang; J. B. Ketterson; G. K. Wong

doi:10.1103/PhysRevB.51.5535

Reply to "Comment on 'Semimetal-to-semiconductor transition in bismuth thin films'"

C. A. Hoffman^*, J. R. Meyer, F. J. Bartoli, A. Di Venere, X. J. Yi, C. L. Hou, H. C. Wang, J. B. Ketterson, G. K. Wong

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

The suppression of intrinsic carrier generation does not in itself constitute proof that a semimetal-to-semiconductor transition has occurred. However, we present a realistic statistical analysis that demonstrates that the Bi film data do in fact imply the opening of a 56-meV energy gap in the thinnest sample (200) studied. The standard vanishing-wave-function model accounts for the experimental observations, whereas the alternative vanishing-gradient model yields results that are inherently inconsistent with the data.

Original language	English (US)
Pages (from-to)	5535-5537
Number of pages	3
Journal	Physical Review B
Volume	51
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.51.5535
State	Published - 1995

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.51.5535

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title = "Reply to {"}Comment on 'Semimetal-to-semiconductor transition in bismuth thin films'{"}",

abstract = "The suppression of intrinsic carrier generation does not in itself constitute proof that a semimetal-to-semiconductor transition has occurred. However, we present a realistic statistical analysis that demonstrates that the Bi film data do in fact imply the opening of a 56-meV energy gap in the thinnest sample (200) studied. The standard vanishing-wave-function model accounts for the experimental observations, whereas the alternative vanishing-gradient model yields results that are inherently inconsistent with the data.",

author = "Hoffman, {C. A.} and Meyer, {J. R.} and Bartoli, {F. J.} and {Di Venere}, A. and Yi, {X. J.} and Hou, {C. L.} and Wang, {H. C.} and Ketterson, {J. B.} and Wong, {G. K.}",

year = "1995",

doi = "10.1103/PhysRevB.51.5535",

language = "English (US)",

volume = "51",

pages = "5535--5537",

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T1 - Reply to "Comment on 'Semimetal-to-semiconductor transition in bismuth thin films'"

AU - Hoffman, C. A.

AU - Meyer, J. R.

AU - Bartoli, F. J.

AU - Di Venere, A.

AU - Yi, X. J.

AU - Hou, C. L.

AU - Wang, H. C.

AU - Ketterson, J. B.

AU - Wong, G. K.

PY - 1995

Y1 - 1995

N2 - The suppression of intrinsic carrier generation does not in itself constitute proof that a semimetal-to-semiconductor transition has occurred. However, we present a realistic statistical analysis that demonstrates that the Bi film data do in fact imply the opening of a 56-meV energy gap in the thinnest sample (200) studied. The standard vanishing-wave-function model accounts for the experimental observations, whereas the alternative vanishing-gradient model yields results that are inherently inconsistent with the data.

AB - The suppression of intrinsic carrier generation does not in itself constitute proof that a semimetal-to-semiconductor transition has occurred. However, we present a realistic statistical analysis that demonstrates that the Bi film data do in fact imply the opening of a 56-meV energy gap in the thinnest sample (200) studied. The standard vanishing-wave-function model accounts for the experimental observations, whereas the alternative vanishing-gradient model yields results that are inherently inconsistent with the data.

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U2 - 10.1103/PhysRevB.51.5535

DO - 10.1103/PhysRevB.51.5535

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VL - 51

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JO - Physical Review B

JF - Physical Review B

IS - 8

ER -

Reply to "Comment on 'Semimetal-to-semiconductor transition in bismuth thin films'"

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