Reply to "Comment on 'Semimetal-to-semiconductor transition in bismuth thin films'"

C. A. Hoffman*, J. R. Meyer, F. J. Bartoli, A. Di Venere, X. J. Yi, C. L. Hou, H. C. Wang, J. B. Ketterson, G. K. Wong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

The suppression of intrinsic carrier generation does not in itself constitute proof that a semimetal-to-semiconductor transition has occurred. However, we present a realistic statistical analysis that demonstrates that the Bi film data do in fact imply the opening of a 56-meV energy gap in the thinnest sample (200) studied. The standard vanishing-wave-function model accounts for the experimental observations, whereas the alternative vanishing-gradient model yields results that are inherently inconsistent with the data.

Original languageEnglish (US)
Pages (from-to)5535-5537
Number of pages3
JournalPhysical Review B
Volume51
Issue number8
DOIs
StatePublished - 1995

ASJC Scopus subject areas

  • Condensed Matter Physics

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