Requirements and design considerations of UV and x-ray detectors for astronomical purposes

Melville P Ulmer*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

Since our previous review, new developments have occurred which make it interesting to compare wide bandgap semiconductors with low temperature detectors. We compare the strengths and weaknesses of each of these devices. We show that there is a need for both types of devices. Furthermore, single or small-array versions of the low temperature devices have been shown to work as single photon-counting devices. This gives the low temperature devices a distinct advantage over wide bandgap detectors. The ability to operate at room temperature and to be able to use standard indium bump bonding techniques to allow for relatively routine fabrication of 500 × 500 pixel formats should, however, provide impetus to further development of wide bandgap semiconductor devices.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsGail J. Brown, Manijeh Razeghi
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages259-266
Number of pages8
Volume2999
ISBN (Print)0819424102
StatePublished - Dec 1 1997
EventPhotodetectors: Materials and Devices II - San Jose, CA, USA
Duration: Feb 12 1997Feb 14 1997

Other

OtherPhotodetectors: Materials and Devices II
CitySan Jose, CA, USA
Period2/12/972/14/97

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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