Abstract
Since our previous review, new developments have occurred which make it interesting to compare wide bandgap semiconductors with low temperature detectors. We compare the strengths and weaknesses of each of these devices. We show that there is a need for both types of devices. Furthermore, single or small-array versions of the low temperature devices have been shown to work as single photon-counting devices. This gives the low temperature devices a distinct advantage over wide bandgap detectors. The ability to operate at room temperature and to be able to use standard indium bump bonding techniques to allow for relatively routine fabrication of 500 × 500 pixel formats should, however, provide impetus to further development of wide bandgap semiconductor devices.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | Gail J. Brown, Manijeh Razeghi |
| Publisher | Society of Photo-Optical Instrumentation Engineers |
| Pages | 259-266 |
| Number of pages | 8 |
| Volume | 2999 |
| ISBN (Print) | 0819424102 |
| State | Published - Dec 1 1997 |
| Event | Photodetectors: Materials and Devices II - San Jose, CA, USA Duration: Feb 12 1997 → Feb 14 1997 |
Other
| Other | Photodetectors: Materials and Devices II |
|---|---|
| City | San Jose, CA, USA |
| Period | 2/12/97 → 2/14/97 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics