Research into the electrical property variation of undoped CdTe and ZnTe crystals grown under Te-rich conditions

Yadong Xu*, Hang Liu, Yihui He, Rui Yang, Lin Luo, Wanqi Jie

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Both undoped ZnTe and CdTe bulk single crystals are grown under Te-saturated conditions from the solution and melt, respectively. To give an insight into the variation of the electrical properties, the defects structures in both tellurides are discussed. According to the actual growth velocities and the entire cooling history, tellurium interstitials (Tei) and Zinc vacancies (VZn) are proposed as the dominant grown-in defects, account for the low resistivity of p-type ZnTe. However, relatively high pulling rates and slow cooling-down processes result in tellurium anti-sites (Te Cd) as the principle grown-in defects, leading to the high resistivity of light n-type CdTe. Further low-temperature (8.6 K) photoluminescence spectra of both tellurides are obtained. The donor-acceptor pair (DAP) and recombination of free electron to neutral acceptor (eA) dominate the luminescence, however, with their intensities are anti-correlated. eA is superior to DAP in undoped Te-rich ZnTe, suggests a high concentration of Tei or VZn. On the contrary, DAP is the principal emission for undoped Te-rich CdTe. In addition, V-line is clearly identified in undoped Te-rich ZnTe, which possibly associated with VZn or close Frenkel pair VZn-Zni.

Original languageEnglish (US)
Pages (from-to)392-397
Number of pages6
JournalJournal of Alloys and Compounds
StatePublished - Nov 5 2014


  • CdTe/ZnTe
  • Conductivity type
  • Defect reaction
  • PL spectroscopy
  • Resistivity

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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