Resilience of monolayer MoS2 memtransistor under heavy ion irradiation

Christopher M. Smyth; John M. Cain; Eric J. Lang; Ping Lu; Xiaodong Yan; Stephanie E. Liu; Jiangtan Yuan; Matthew P. Bland; Nathan J. Madden; Taisuke Ohta; Vinod K. Sangwan; Mark C. Hersam; Khalid Hattar; Stanley S. Chou; Tzu Ming Lu

doi:10.1557/s43578-022-00642-x

Resilience of monolayer MoS₂ memtransistor under heavy ion irradiation

Christopher M. Smyth^*, John M. Cain, Eric J. Lang, Ping Lu, Xiaodong Yan, Stephanie E. Liu, Jiangtan Yuan, Matthew P. Bland, Nathan J. Madden, Taisuke Ohta, Vinod K. Sangwan, Mark C. Hersam, Khalid Hattar, Stanley S. Chou, Tzu Ming Lu

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Due to its unique gate-tunable non-volatility, the memtransistor is a promising component for low-energy neuromorphic computing. The grain boundary- and point defect-enabled resistive switching in MoS₂ memtransistors suggests an inherent ionizing radiation tolerance. However, the memtransistor resilience under heavy ion irradiation has not yet been investigated. In this work, polycrystalline, monolayer MoS₂ films, and memtransistors are irradiated with 48 keV Au. Fluence-dependent effects on the MoS₂ lattice structure, chemical states, and memtransistor performance metrics are elucidated. When the Au fluence remains below 10¹³ cm⁻², the memtransistor functionalities are preserved. When the Au fluence exceeds 10¹⁴ cm⁻², the MoS₂ is amorphized and memtransistor functionalities are lost. According to Raman spectroscopy and transmission electron microscopy, the MoS₂ defect concentration increases with increasing Au fluence. X-ray photoelectron spectroscopy substantiates a significant S:Mo ratio reduction with increasing Au fluence. This work suggests that MoS₂ memtransistors possess sufficient heavy ion resilience for few-year space missions. Graphical abstract: [Figure not available: see fulltext.]

Original language	English (US)
Pages (from-to)	2723-2737
Number of pages	15
Journal	Journal of Materials Research
Volume	37
Issue number	17
DOIs	https://doi.org/10.1557/s43578-022-00642-x
State	Published - Sep 14 2022

Funding

This research was primarily supported by the Laboratory Directed Research and Development Program at Sandia National Laboratories (SNL). This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the US Department of Energy (DOE) Office of Science. SNL is a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia LLC, a wholly owned subsidiary of Honeywell International Inc. for the US DOE National Nuclear Security Administration under contract DE-NA0003525. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the US DOE or the United States Government. This work also made use of the Northwestern University NUANCE Center and Micro/Nano Fabrication Facility (NUFAB), which has received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS-1542205), the MRSEC program (NSF DMR-1720139) at the Materials Research Center, the International Institute for Nanotechnology (IIN), the Keck Foundation, and the State of Illinois.

Keywords

Defect
Ionizing radiation
Memtransistor
MoS
Radiation tolerance

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/s43578-022-00642-x

Cite this

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title = "Resilience of monolayer MoS2 memtransistor under heavy ion irradiation",

abstract = "Due to its unique gate-tunable non-volatility, the memtransistor is a promising component for low-energy neuromorphic computing. The grain boundary- and point defect-enabled resistive switching in MoS2 memtransistors suggests an inherent ionizing radiation tolerance. However, the memtransistor resilience under heavy ion irradiation has not yet been investigated. In this work, polycrystalline, monolayer MoS2 films, and memtransistors are irradiated with 48 keV Au. Fluence-dependent effects on the MoS2 lattice structure, chemical states, and memtransistor performance metrics are elucidated. When the Au fluence remains below 1013 cm−2, the memtransistor functionalities are preserved. When the Au fluence exceeds 1014 cm−2, the MoS2 is amorphized and memtransistor functionalities are lost. According to Raman spectroscopy and transmission electron microscopy, the MoS2 defect concentration increases with increasing Au fluence. X-ray photoelectron spectroscopy substantiates a significant S:Mo ratio reduction with increasing Au fluence. This work suggests that MoS2 memtransistors possess sufficient heavy ion resilience for few-year space missions. Graphical abstract: [Figure not available: see fulltext.]",

keywords = "Defect, Ionizing radiation, Memtransistor, MoS, Radiation tolerance",

author = "Smyth, {Christopher M.} and Cain, {John M.} and Lang, {Eric J.} and Ping Lu and Xiaodong Yan and Liu, {Stephanie E.} and Jiangtan Yuan and Bland, {Matthew P.} and Madden, {Nathan J.} and Taisuke Ohta and Sangwan, {Vinod K.} and Hersam, {Mark C.} and Khalid Hattar and Chou, {Stanley S.} and Lu, {Tzu Ming}",

note = "Publisher Copyright: {\textcopyright} 2022, The Author(s), under exclusive licence to The Materials Research Society.",

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AU - Smyth, Christopher M.

AU - Cain, John M.

AU - Lang, Eric J.

AU - Lu, Ping

AU - Yan, Xiaodong

AU - Liu, Stephanie E.

AU - Yuan, Jiangtan

AU - Bland, Matthew P.

AU - Madden, Nathan J.

AU - Ohta, Taisuke

AU - Sangwan, Vinod K.

AU - Hersam, Mark C.

AU - Hattar, Khalid

AU - Chou, Stanley S.

AU - Lu, Tzu Ming

PY - 2022/9/14

Y1 - 2022/9/14

N2 - Due to its unique gate-tunable non-volatility, the memtransistor is a promising component for low-energy neuromorphic computing. The grain boundary- and point defect-enabled resistive switching in MoS2 memtransistors suggests an inherent ionizing radiation tolerance. However, the memtransistor resilience under heavy ion irradiation has not yet been investigated. In this work, polycrystalline, monolayer MoS2 films, and memtransistors are irradiated with 48 keV Au. Fluence-dependent effects on the MoS2 lattice structure, chemical states, and memtransistor performance metrics are elucidated. When the Au fluence remains below 1013 cm−2, the memtransistor functionalities are preserved. When the Au fluence exceeds 1014 cm−2, the MoS2 is amorphized and memtransistor functionalities are lost. According to Raman spectroscopy and transmission electron microscopy, the MoS2 defect concentration increases with increasing Au fluence. X-ray photoelectron spectroscopy substantiates a significant S:Mo ratio reduction with increasing Au fluence. This work suggests that MoS2 memtransistors possess sufficient heavy ion resilience for few-year space missions. Graphical abstract: [Figure not available: see fulltext.]

AB - Due to its unique gate-tunable non-volatility, the memtransistor is a promising component for low-energy neuromorphic computing. The grain boundary- and point defect-enabled resistive switching in MoS2 memtransistors suggests an inherent ionizing radiation tolerance. However, the memtransistor resilience under heavy ion irradiation has not yet been investigated. In this work, polycrystalline, monolayer MoS2 films, and memtransistors are irradiated with 48 keV Au. Fluence-dependent effects on the MoS2 lattice structure, chemical states, and memtransistor performance metrics are elucidated. When the Au fluence remains below 1013 cm−2, the memtransistor functionalities are preserved. When the Au fluence exceeds 1014 cm−2, the MoS2 is amorphized and memtransistor functionalities are lost. According to Raman spectroscopy and transmission electron microscopy, the MoS2 defect concentration increases with increasing Au fluence. X-ray photoelectron spectroscopy substantiates a significant S:Mo ratio reduction with increasing Au fluence. This work suggests that MoS2 memtransistors possess sufficient heavy ion resilience for few-year space missions. Graphical abstract: [Figure not available: see fulltext.]

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