Resonance Raman spectroelectrochemistry of semiconductor electrodes: The photooxidation of tetrathiafulvalene at n-GaAs(100) in acetonitrile

Richard P. Van Duyne; Jeanne P. Haushalter

doi:10.1021/j150656a006

Resonance Raman spectroelectrochemistry of semiconductor electrodes: The photooxidation of tetrathiafulvalene at n-GaAs(100) in acetonitrile

Richard P. Van Duyne^*, Jeanne P. Haushalter

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Resonance Raman spectroelectrochemistry (RRSE) is applied for the first time to the study of a laser-driven photoelectrochemical process at a III-V semiconductor in nonaqueous solution. The specific system investigated is the one-electron photooxidation of tetrathiafulvalene (TTF) to form the corresponding cation radical (TTF⁺·) at n-type GaAs(100) in acetonitrile solution. Resonance Raman spectra (RRS) of TTF⁺· excited into both electronic excited states accessible to visible lasers as well as millisecond time scale resonance Raman intensity (RRI) vs. time transients are reported. Both the spectra and transients represent the detection of TTF⁺· in the diffusion layer adjacent to the electrode surface rather than in the bulk of solution.

Original language	English (US)
Pages (from-to)	2446-2451
Number of pages	6
Journal	Journal of physical chemistry
Volume	88
Issue number	12
DOIs	https://doi.org/10.1021/j150656a006
State	Published - 1984

ASJC Scopus subject areas

Engineering(all)
Physical and Theoretical Chemistry

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title = "Resonance Raman spectroelectrochemistry of semiconductor electrodes: The photooxidation of tetrathiafulvalene at n-GaAs(100) in acetonitrile",

abstract = "Resonance Raman spectroelectrochemistry (RRSE) is applied for the first time to the study of a laser-driven photoelectrochemical process at a III-V semiconductor in nonaqueous solution. The specific system investigated is the one-electron photooxidation of tetrathiafulvalene (TTF) to form the corresponding cation radical (TTF+·) at n-type GaAs(100) in acetonitrile solution. Resonance Raman spectra (RRS) of TTF+· excited into both electronic excited states accessible to visible lasers as well as millisecond time scale resonance Raman intensity (RRI) vs. time transients are reported. Both the spectra and transients represent the detection of TTF+· in the diffusion layer adjacent to the electrode surface rather than in the bulk of solution.",

author = "{Van Duyne}, {Richard P.} and Haushalter, {Jeanne P.}",

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T1 - Resonance Raman spectroelectrochemistry of semiconductor electrodes

T2 - The photooxidation of tetrathiafulvalene at n-GaAs(100) in acetonitrile

AU - Van Duyne, Richard P.

AU - Haushalter, Jeanne P.

PY - 1984

Y1 - 1984

N2 - Resonance Raman spectroelectrochemistry (RRSE) is applied for the first time to the study of a laser-driven photoelectrochemical process at a III-V semiconductor in nonaqueous solution. The specific system investigated is the one-electron photooxidation of tetrathiafulvalene (TTF) to form the corresponding cation radical (TTF+·) at n-type GaAs(100) in acetonitrile solution. Resonance Raman spectra (RRS) of TTF+· excited into both electronic excited states accessible to visible lasers as well as millisecond time scale resonance Raman intensity (RRI) vs. time transients are reported. Both the spectra and transients represent the detection of TTF+· in the diffusion layer adjacent to the electrode surface rather than in the bulk of solution.

AB - Resonance Raman spectroelectrochemistry (RRSE) is applied for the first time to the study of a laser-driven photoelectrochemical process at a III-V semiconductor in nonaqueous solution. The specific system investigated is the one-electron photooxidation of tetrathiafulvalene (TTF) to form the corresponding cation radical (TTF+·) at n-type GaAs(100) in acetonitrile solution. Resonance Raman spectra (RRS) of TTF+· excited into both electronic excited states accessible to visible lasers as well as millisecond time scale resonance Raman intensity (RRI) vs. time transients are reported. Both the spectra and transients represent the detection of TTF+· in the diffusion layer adjacent to the electrode surface rather than in the bulk of solution.

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Resonance Raman spectroelectrochemistry of semiconductor electrodes: The photooxidation of tetrathiafulvalene at n-GaAs(100) in acetonitrile

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