Resonant cavity enhanced heterojunction phototransistors based on type-II superlattices

Jiakai Li, Arash Dehzangi, Donghai Wu, Ryan McClintock, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Resonant cavity enhanced heterojunction phototransistor based on InAs/GaSb/AlSb type-II superlattice grown by molecular beam epitaxy has been demonstrated. The resonant wavelength was designed to be at near 1.9 μm wavelength range at room temperature. An eleven-pair lattice matched GaSb-AlAsSb quarter-wavelength Bragg reflector was used in the RCE-HPT to enhance the photoresponse. The device showed the wavelength selectivity and a cavity enhancement of the responsivity at 1.9 μm at room temperature.

Original languageEnglish (US)
Article number103552
JournalInfrared Physics and Technology
DOIs
StateAccepted/In press - 2020

Keywords

  • Bragg reflectors
  • Infrared photodetectors
  • Phototransistors
  • Resonant-cavity
  • Type-II superlattice

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Resonant cavity enhanced heterojunction phototransistors based on type-II superlattices'. Together they form a unique fingerprint.

Cite this