Resonant cavity enhanced heterojunction phototransistors based on type-II superlattices

Jiakai Li; Arash Dehzangi; Donghai Wu; Ryan McClintock; Manijeh Razeghi

doi:10.1016/j.infrared.2020.103552

Resonant cavity enhanced heterojunction phototransistors based on type-II superlattices

Jiakai Li, Arash Dehzangi, Donghai Wu, Ryan McClintock, Manijeh Razeghi^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Resonant cavity enhanced heterojunction phototransistor based on InAs/GaSb/AlSb type-II superlattice grown by molecular beam epitaxy has been demonstrated. The resonant wavelength was designed to be at near 1.9 μm wavelength range at room temperature. An eleven-pair lattice matched GaSb-AlAsSb quarter-wavelength Bragg reflector was used in the RCE-HPT to enhance the photoresponse. The device showed the wavelength selectivity and a cavity enhancement of the responsivity at 1.9 μm at room temperature.

Original language	English (US)
Article number	103552
Journal	Infrared Physics and Technology
Volume	113
DOIs	https://doi.org/10.1016/j.infrared.2020.103552
State	Published - Mar 2021

Keywords

Bragg reflectors
Infrared photodetectors
Phototransistors
Resonant-cavity
Type-II superlattice

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.infrared.2020.103552

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title = "Resonant cavity enhanced heterojunction phototransistors based on type-II superlattices",

abstract = "Resonant cavity enhanced heterojunction phototransistor based on InAs/GaSb/AlSb type-II superlattice grown by molecular beam epitaxy has been demonstrated. The resonant wavelength was designed to be at near 1.9 μm wavelength range at room temperature. An eleven-pair lattice matched GaSb-AlAsSb quarter-wavelength Bragg reflector was used in the RCE-HPT to enhance the photoresponse. The device showed the wavelength selectivity and a cavity enhancement of the responsivity at 1.9 μm at room temperature.",

keywords = "Bragg reflectors, Infrared photodetectors, Phototransistors, Resonant-cavity, Type-II superlattice",

author = "Jiakai Li and Arash Dehzangi and Donghai Wu and Ryan McClintock and Manijeh Razeghi",

note = "Funding Information: This work was supported by the Defense Advanced Research Projects Agency (DARPA) under Agreement No. FA8650-18-1-7810. The authors would like to acknowledge the support and encouragement of, Dr. Whitney Mason from DARPA and Dr. Shanee Pacley and Dr. Kurt Eyink from the U.S. Air Force Research Laboratory. Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2021",

month = mar,

doi = "10.1016/j.infrared.2020.103552",

language = "English (US)",

volume = "113",

journal = "Infrared Physics and Technology",

issn = "1350-4495",

publisher = "Elsevier",

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T1 - Resonant cavity enhanced heterojunction phototransistors based on type-II superlattices

AU - Li, Jiakai

AU - Dehzangi, Arash

AU - Wu, Donghai

AU - McClintock, Ryan

AU - Razeghi, Manijeh

N1 - Funding Information: This work was supported by the Defense Advanced Research Projects Agency (DARPA) under Agreement No. FA8650-18-1-7810. The authors would like to acknowledge the support and encouragement of, Dr. Whitney Mason from DARPA and Dr. Shanee Pacley and Dr. Kurt Eyink from the U.S. Air Force Research Laboratory. Publisher Copyright: © 2020 Elsevier B.V.

PY - 2021/3

Y1 - 2021/3

N2 - Resonant cavity enhanced heterojunction phototransistor based on InAs/GaSb/AlSb type-II superlattice grown by molecular beam epitaxy has been demonstrated. The resonant wavelength was designed to be at near 1.9 μm wavelength range at room temperature. An eleven-pair lattice matched GaSb-AlAsSb quarter-wavelength Bragg reflector was used in the RCE-HPT to enhance the photoresponse. The device showed the wavelength selectivity and a cavity enhancement of the responsivity at 1.9 μm at room temperature.

AB - Resonant cavity enhanced heterojunction phototransistor based on InAs/GaSb/AlSb type-II superlattice grown by molecular beam epitaxy has been demonstrated. The resonant wavelength was designed to be at near 1.9 μm wavelength range at room temperature. An eleven-pair lattice matched GaSb-AlAsSb quarter-wavelength Bragg reflector was used in the RCE-HPT to enhance the photoresponse. The device showed the wavelength selectivity and a cavity enhancement of the responsivity at 1.9 μm at room temperature.

KW - Bragg reflectors

KW - Infrared photodetectors

KW - Phototransistors

KW - Resonant-cavity

KW - Type-II superlattice

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JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

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Resonant cavity enhanced heterojunction phototransistors based on type-II superlattices

Abstract

Keywords

ASJC Scopus subject areas

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