Resonant cavity enhanced heterojunction phototransistor based on InAs/GaSb/AlSb type-II superlattice grown by molecular beam epitaxy has been demonstrated. The resonant wavelength was designed to be at near 1.9 μm wavelength range at room temperature. An eleven-pair lattice matched GaSb-AlAsSb quarter-wavelength Bragg reflector was used in the RCE-HPT to enhance the photoresponse. The device showed the wavelength selectivity and a cavity enhancement of the responsivity at 1.9 μm at room temperature.
- Bragg reflectors
- Infrared photodetectors
- Type-II superlattice
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics