Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors

Christopher Jelen*, Steven Slivken, Thibaut David, G. Brown, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations


Dark current noise measurements were carried out between 10 and 104 Hz at T=80 K on two InGaAs/InP quantum well infrared photodetectors (QWIPs) designed for 8 μm infrared detection. Using the measured noise data, we have calculated the thermal generation rate, bias-dependant gain, electron trapping probability, and electron diffusion length. The calculated thermal generation rate (∼ 7.1022 cm-3 s-1) is similar to AlGaAs/GaAs QWIPs with similar peak wavelengths, but the gain is 50 X larger, indicating improved transport and carrier lifetime are obtained in the binary InP barriers. As a result, a large responsivity of 7.5 A/W at 5 V bias and detectivity of 5×1011 cm √Hz / W at 1.2 V bias were measured for the InGaAs/InP QWIPs at T=80 K.

Original languageEnglish (US)
Pages (from-to)96-104
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1998
EventPhotodetectors: Materials and Devices III - San Jose, CA, United States
Duration: Jan 28 1998Jan 30 1998


  • InGaAs
  • InP
  • Infrared detector
  • Noise
  • QWIP
  • Quantum well
  • Responsivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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