Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors

Christopher Jelen; Steven Boyd Slivken; Thibaut David; G. Brown; Manijeh Razeghi

doi:10.1117/12.304470

Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors

Christopher Jelen^*, Steven Boyd Slivken, Thibaut David, G. Brown, Manijeh Razeghi

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Abstract

Dark current noise measurements were carried out between 10 and 10 ⁴ Hz at T=80 K on two InGaAs/InP quantum well infrared photodetectors (QWIPs) designed for 8 μm infrared detection. Using the measured noise data, we have calculated the thermal generation rate, bias-dependant gain, electron trapping probability, and electron diffusion length. The calculated thermal generation rate (∼ 7.10 ²² cm ^-3 s ^-1 ) is similar to AlGaAs/GaAs QWIPs with similar peak wavelengths, but the gain is 50 X larger, indicating improved transport and carrier lifetime are obtained in the binary InP barriers. As a result, a large responsivity of 7.5 A/W at 5 V bias and detectivity of 5×10 ¹¹ cm √Hz / W at 1.2 V bias were measured for the InGaAs/InP QWIPs at T=80 K.

Original language	English (US)
Pages (from-to)	96-104
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3287
DOIs	https://doi.org/10.1117/12.304470
State	Published - Dec 1 1998
Event	Photodetectors: Materials and Devices III - San Jose, CA, United States Duration: Jan 28 1998 → Jan 30 1998

Keywords

InGaAs
InP
Infrared detector
Noise
QWIP
Quantum well
Responsivity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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@article{03b88e33220748a1babf04a591ca3821,

title = "Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors",

abstract = " Dark current noise measurements were carried out between 10 and 10 4 Hz at T=80 K on two InGaAs/InP quantum well infrared photodetectors (QWIPs) designed for 8 μm infrared detection. Using the measured noise data, we have calculated the thermal generation rate, bias-dependant gain, electron trapping probability, and electron diffusion length. The calculated thermal generation rate (∼ 7.10 22 cm -3 s -1 ) is similar to AlGaAs/GaAs QWIPs with similar peak wavelengths, but the gain is 50 X larger, indicating improved transport and carrier lifetime are obtained in the binary InP barriers. As a result, a large responsivity of 7.5 A/W at 5 V bias and detectivity of 5×10 11 cm √Hz / W at 1.2 V bias were measured for the InGaAs/InP QWIPs at T=80 K. ",

keywords = "InGaAs, InP, Infrared detector, Noise, QWIP, Quantum well, Responsivity",

author = "Christopher Jelen and Slivken, {Steven Boyd} and Thibaut David and G. Brown and Manijeh Razeghi",

year = "1998",

month = dec,

day = "1",

doi = "10.1117/12.304470",

language = "English (US)",

volume = "3287",

pages = "96--104",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Photodetectors: Materials and Devices III ; Conference date: 28-01-1998 Through 30-01-1998",

}

TY - JOUR

T1 - Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors

AU - Jelen, Christopher

AU - Slivken, Steven Boyd

AU - David, Thibaut

AU - Brown, G.

AU - Razeghi, Manijeh

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Dark current noise measurements were carried out between 10 and 10 4 Hz at T=80 K on two InGaAs/InP quantum well infrared photodetectors (QWIPs) designed for 8 μm infrared detection. Using the measured noise data, we have calculated the thermal generation rate, bias-dependant gain, electron trapping probability, and electron diffusion length. The calculated thermal generation rate (∼ 7.10 22 cm -3 s -1 ) is similar to AlGaAs/GaAs QWIPs with similar peak wavelengths, but the gain is 50 X larger, indicating improved transport and carrier lifetime are obtained in the binary InP barriers. As a result, a large responsivity of 7.5 A/W at 5 V bias and detectivity of 5×10 11 cm √Hz / W at 1.2 V bias were measured for the InGaAs/InP QWIPs at T=80 K.

AB - Dark current noise measurements were carried out between 10 and 10 4 Hz at T=80 K on two InGaAs/InP quantum well infrared photodetectors (QWIPs) designed for 8 μm infrared detection. Using the measured noise data, we have calculated the thermal generation rate, bias-dependant gain, electron trapping probability, and electron diffusion length. The calculated thermal generation rate (∼ 7.10 22 cm -3 s -1 ) is similar to AlGaAs/GaAs QWIPs with similar peak wavelengths, but the gain is 50 X larger, indicating improved transport and carrier lifetime are obtained in the binary InP barriers. As a result, a large responsivity of 7.5 A/W at 5 V bias and detectivity of 5×10 11 cm √Hz / W at 1.2 V bias were measured for the InGaAs/InP QWIPs at T=80 K.

KW - InGaAs

KW - InP

KW - Infrared detector

KW - Noise

KW - QWIP

KW - Quantum well

KW - Responsivity

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U2 - 10.1117/12.304470

DO - 10.1117/12.304470

M3 - Conference article

AN - SCOPUS:0032224437

SN - 0277-786X

VL - 3287

SP - 96

EP - 104

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Photodetectors: Materials and Devices III

Y2 - 28 January 1998 through 30 January 1998

ER -

Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors

Abstract

Keywords

ASJC Scopus subject areas

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