REVIEW OF ION SURFACE INTERACTIONS DURING CRYSTAL GROWTH FROM THE VAPOR PHASE.

J. E. Greene; S. A. Barnett

REVIEW OF ION SURFACE INTERACTIONS DURING CRYSTAL GROWTH FROM THE VAPOR PHASE.

J. E. Greene^*, S. A. Barnett

^*Corresponding author for this work

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

The objective of this paper is to provide an overview of important ion/surface effects during thin film growth by a variety of vapor phase techniques including glow discharge and ion beam sputtering, accelerated-beam molecular beam epitaxy, and plasma-assisted chemical vapor deposition.

Original language	English (US)
Title of host publication	Unknown Host Publication Title
Editors	Toshinori Takagi
Pages	1049-1060
Number of pages	12
State	Published - Dec 1 1983

ASJC Scopus subject areas

Engineering(all)

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title = "REVIEW OF ION SURFACE INTERACTIONS DURING CRYSTAL GROWTH FROM THE VAPOR PHASE.",

abstract = "The objective of this paper is to provide an overview of important ion/surface effects during thin film growth by a variety of vapor phase techniques including glow discharge and ion beam sputtering, accelerated-beam molecular beam epitaxy, and plasma-assisted chemical vapor deposition.",

author = "Greene, {J. E.} and Barnett, {S. A.}",

year = "1983",

month = dec,

day = "1",

language = "English (US)",

pages = "1049--1060",

editor = "Toshinori Takagi",

booktitle = "Unknown Host Publication Title",

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AU - Barnett, S. A.

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Y1 - 1983/12/1

N2 - The objective of this paper is to provide an overview of important ion/surface effects during thin film growth by a variety of vapor phase techniques including glow discharge and ion beam sputtering, accelerated-beam molecular beam epitaxy, and plasma-assisted chemical vapor deposition.

AB - The objective of this paper is to provide an overview of important ion/surface effects during thin film growth by a variety of vapor phase techniques including glow discharge and ion beam sputtering, accelerated-beam molecular beam epitaxy, and plasma-assisted chemical vapor deposition.

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M3 - Conference contribution

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A2 - Takagi, Toshinori

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