Review of the band offsets measurements in the GaAs/Ga0.49In0.51P system

F. Omnes; M. Razeghi

Review of the band offsets measurements in the GaAs/Ga_0.49In_0.51P system

F. Omnes^*, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The purpose of this paper is to give a review of the band offsets measurements in the GaAs/Ga_0.49In_0.51P system. Methods such as C-V profiling on GaAs/Ga_0.49In_0.51P heterojunctions [1], DLTS on GaAs/Ga_0.49In_0.51P quantum wells [2], I-V measurements on GaAs/Ga_0.49In_0.51P HEMTS [3] and temperature dependence of the collector current of GaAs/Ga_0.49In_0.51P HBTs [4] have been employed. In a general way, the measured values of ΔE_c and ΔE_v lie in the range 0.198 to 0.231 eV for ΔE_c, and 0.24 to 0.285 eV for ΛE_v.

Original language	English (US)
Pages (from-to)	585-594
Number of pages	10
Journal	Revue technique - Thomson-CSF
Volume	23
Issue number	3
State	Published - Sep 1 1991

ASJC Scopus subject areas

Engineering(all)

Cite this

@article{133119aba39644589e15ff00214f1206,

title = "Review of the band offsets measurements in the GaAs/Ga0.49In0.51P system",

abstract = "The purpose of this paper is to give a review of the band offsets measurements in the GaAs/Ga0.49In0.51P system. Methods such as C-V profiling on GaAs/Ga0.49In0.51P heterojunctions [1], DLTS on GaAs/Ga0.49In0.51P quantum wells [2], I-V measurements on GaAs/Ga0.49In0.51P HEMTS [3] and temperature dependence of the collector current of GaAs/Ga0.49In0.51P HBTs [4] have been employed. In a general way, the measured values of ΔEc and ΔEv lie in the range 0.198 to 0.231 eV for ΔEc, and 0.24 to 0.285 eV for ΛEv.",

author = "F. Omnes and M. Razeghi",

year = "1991",

month = sep,

day = "1",

language = "English (US)",

volume = "23",

pages = "585--594",

journal = "Revue technique - Thomson-CSF",

issn = "0035-4279",

number = "3",

}

TY - JOUR

T1 - Review of the band offsets measurements in the GaAs/Ga0.49In0.51P system

AU - Omnes, F.

AU - Razeghi, M.

PY - 1991/9/1

Y1 - 1991/9/1

N2 - The purpose of this paper is to give a review of the band offsets measurements in the GaAs/Ga0.49In0.51P system. Methods such as C-V profiling on GaAs/Ga0.49In0.51P heterojunctions [1], DLTS on GaAs/Ga0.49In0.51P quantum wells [2], I-V measurements on GaAs/Ga0.49In0.51P HEMTS [3] and temperature dependence of the collector current of GaAs/Ga0.49In0.51P HBTs [4] have been employed. In a general way, the measured values of ΔEc and ΔEv lie in the range 0.198 to 0.231 eV for ΔEc, and 0.24 to 0.285 eV for ΛEv.

AB - The purpose of this paper is to give a review of the band offsets measurements in the GaAs/Ga0.49In0.51P system. Methods such as C-V profiling on GaAs/Ga0.49In0.51P heterojunctions [1], DLTS on GaAs/Ga0.49In0.51P quantum wells [2], I-V measurements on GaAs/Ga0.49In0.51P HEMTS [3] and temperature dependence of the collector current of GaAs/Ga0.49In0.51P HBTs [4] have been employed. In a general way, the measured values of ΔEc and ΔEv lie in the range 0.198 to 0.231 eV for ΔEc, and 0.24 to 0.285 eV for ΛEv.

UR - http://www.scopus.com/inward/record.url?scp=0026226529&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026226529&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0026226529

SN - 0035-4279

VL - 23

SP - 585

EP - 594

JO - Revue technique - Thomson-CSF

JF - Revue technique - Thomson-CSF

IS - 3

ER -

Review of the band offsets measurements in the GaAs/Ga_0.49In_0.51P system

Abstract

ASJC Scopus subject areas

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