The purpose of this paper is to give a review of the band offsets measurements in the GaAs/Ga0.49In0.51P system. Methods such as C-V profiling on GaAs/Ga0.49In0.51P heterojunctions , DLTS on GaAs/Ga0.49In0.51P quantum wells , I-V measurements on GaAs/Ga0.49In0.51P HEMTS  and temperature dependence of the collector current of GaAs/Ga0.49In0.51P HBTs  have been employed. In a general way, the measured values of ΔEc and ΔEv lie in the range 0.198 to 0.231 eV for ΔEc, and 0.24 to 0.285 eV for ΛEv.
|Original language||English (US)|
|Number of pages||10|
|Journal||Revue technique - Thomson-CSF|
|State||Published - Sep 1 1991|
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