Review of the band offsets measurements in the GaAs/Ga0.49In0.51P system

F. Omnes*, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The purpose of this paper is to give a review of the band offsets measurements in the GaAs/Ga0.49In0.51P system. Methods such as C-V profiling on GaAs/Ga0.49In0.51P heterojunctions [1], DLTS on GaAs/Ga0.49In0.51P quantum wells [2], I-V measurements on GaAs/Ga0.49In0.51P HEMTS [3] and temperature dependence of the collector current of GaAs/Ga0.49In0.51P HBTs [4] have been employed. In a general way, the measured values of ΔEc and ΔEv lie in the range 0.198 to 0.231 eV for ΔEc, and 0.24 to 0.285 eV for ΛEv.

Original languageEnglish (US)
Pages (from-to)585-594
Number of pages10
JournalRevue technique - Thomson-CSF
Volume23
Issue number3
StatePublished - Sep 1 1991

ASJC Scopus subject areas

  • Engineering(all)

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