@inproceedings{8b1127357cbd45e3a225aa1170f1d2ed,
title = "Revolutionary development of Type-II GaSb/InAs superlatices for third generation of IR imaging",
abstract = "Recent efforts to improve the performance of Type II InAs/GaSb superlattice photodiodes and focal plane arrays (FPA) have been reviewed. The theoretical bandstructure models have been discussed first. A review of recent developments in growth and characterization techniques is given. The efforts to improve the performance of LWIR photodiodes and the latest result have been reported. The results of both small and large format LWIR FPAs, the latest results to elevate the operating temperature of MWIR photodiodes and FPAs, the latest results of two color FPAs, the results of novel minority unipolar devices (pMp) and finally the results of photodiode and FPA fabrication on GaAs substrates are reviewed.",
keywords = "GaAs substrate, InAs/GaSb, LWIR, M-structure, MWIR, Type II superlattice, focal plane arrays, photodetectors",
author = "Manijeh Razeghi and Pour, {Siamak Abdollahi}",
year = "2012",
doi = "10.1117/12.923833",
language = "English (US)",
isbn = "9780819490315",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
booktitle = "Infrared Technology and Applications XXXVIII",
note = "38th Conference on Infrared Technology and Applications ; Conference date: 23-04-2012 Through 27-04-2012",
}