Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors

Sunho Jeong*, Young Geun Ha, Jooho Moon, Antonio Facchetti, Tobin Jay Marks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

427 Scopus citations

Abstract

Ga doping in indium zinc oxide (IZO)based amorphous-oxide semiconductors (AOSs) promotes the formation of oxidelattice structures with oxygen vacancies at low annealing temperatures, which is essential for acceptable thin-film-transistor performance (see figure). The mobility dependence on annealing temperature and AOS composition are analyzed and the chemical role of Ga is clarified, as required for solution-processed, lowtemperature-annealed AOSs.

Original languageEnglish (US)
Pages (from-to)1346-1350
Number of pages5
JournalAdvanced Materials
Volume22
Issue number12
DOIs
StatePublished - Mar 26 2010

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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