Role of initial conductance and gas pressure on the conductance response of single-crystal SnO2 thin films to H2, O2, and CO

J. Vetrone*, Yip-Wah Chung, R. Cavicchi, S. Semancik

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Gas-induced conductance changes were measured on palladium-dosed single-crystal tin oxide (SnO2) thin films having well-characterized surface properties. Films were fabricated using two methods: reactive sputtering and chemical vapor deposition. Film orientation and crystal structure were determined by x-ray diffraction, while surface morphology was characterized using atomic force microscopy. Conductance changes were measured continuously on film surfaces during alternating exposure and evacuation cycles to partial pressures of H2, O2, and CO in a vacuum chamber. The conductance change was found to be proportional to the square root of the initial film conductance and was interpreted in terms of gas-induced changes in the width of a near-surface space-charge layer. The variation of conductance as a function of gas pressure during alternating exposure and evacuation cycles of H2 and O2 is consistent with a model that involves surface reactions between coadsorbates.

Original languageEnglish (US)
Pages (from-to)8371-8376
Number of pages6
JournalJournal of Applied Physics
Volume73
Issue number12
DOIs
StatePublished - Dec 1 1993

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Role of initial conductance and gas pressure on the conductance response of single-crystal SnO<sub>2</sub> thin films to H<sub>2</sub>, O<sub>2</sub>, and CO'. Together they form a unique fingerprint.

Cite this