INIS
defects
100%
crystals
75%
stoichiometry
75%
growth
50%
x radiation
50%
density functional method
50%
americium 241
50%
lifetime
25%
spectroscopy
25%
cost
25%
single crystals
25%
charge transport
25%
sensitivity
25%
values
25%
semiconductor materials
25%
density
25%
temperature range 0273-0400 k
25%
mobility
25%
radiation detection
25%
radiation sources
25%
irradiation
25%
electric fields
25%
thickness
25%
traps
25%
bridgman method
25%
x-ray detection
25%
photoconductivity
25%
MeV range
25%
cobalt 57
25%
alpha particles
25%
Physics
X Ray
75%
Defects
75%
Crystals
75%
Density Functional Theory
50%
Growth
50%
Calculation
50%
First-Principles
25%
Transport Properties
25%
Room Temperature
25%
Single Crystals
25%
Photoconductivity
25%
Spectroscopy
25%
Stoichiometry
25%
Degradation
25%
Semiconductor
25%
Bridgman Method
25%
Radiation Detection
25%
Electrical Resistivity
25%
Radiation Sources
25%
Antisite Defects
25%
Alpha Radiation
25%
Nuclear Radiation
25%
Responses
25%
Detection
25%
Value
25%
Mobility
25%
Deviation
25%
Chemistry
Crystalline Material
75%
X-Ray
75%
Density Functional Theory
50%
Thermally Stimulated Current
50%
Transport Property
25%
Single Crystalline Solid
25%
Spectroscopy
25%
Reaction Stoichiometry
25%
Electric Field
25%
Semiconductor
25%
Photoconductivity
25%
Amorphous Material
25%
Deep Donor
25%
Alpha-Particle
25%
Ambient Reaction Temperature
25%
Atom
25%
Density
25%
Nuclear Radiation
25%
Chemical Reaction Product
25%
Degradation
25%
Acceptor
25%
Compound Mobility
25%
Thickness
25%
Irradiation
25%
Resistivity
25%
Material Science
Crystal
75%
Defect
75%
Detector
50%
Single Crystal
25%
Semiconductor Material
25%
Crystal Growth From Melt
25%
Material
25%
Irradiation
25%
Amorphous Material
25%