Room Temperature, Continuous Wave Quantum Cascade Laser Grown Directly on a Si Wafer

Steven Slivken; Manijeh Razeghi

doi:10.1109/JQE.2023.3282710

Room Temperature, Continuous Wave Quantum Cascade Laser Grown Directly on a Si Wafer

Steven Slivken, Manijeh Razeghi^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report the room temperature demonstration of a high power, continuous wave, LWIR quantum cascade laser grown directly on a Si substrate. A new wafer, based on a high efficiency, strain-balanced laser core was processed into a lateral injection buried heterostructure laser geometry. A pulsed efficiency of 11.1% was demonstrated at room temperature, with an emission wavelength of 8.35μ m. With low fidelity, epilayer-up packaging, CW emission up to 343 K was also demonstrated, with a maximum output power of > 0.7 W near room temperature.

Original language	English (US)
Article number	2300206
Journal	IEEE Journal of Quantum Electronics
Volume	59
Issue number	4
DOIs	https://doi.org/10.1109/JQE.2023.3282710
State	Published - Aug 1 2023

Keywords

Quantum cascade laser
heteroepitaxy
monolithic integration

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2023.3282710

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title = "Room Temperature, Continuous Wave Quantum Cascade Laser Grown Directly on a Si Wafer",

abstract = "We report the room temperature demonstration of a high power, continuous wave, LWIR quantum cascade laser grown directly on a Si substrate. A new wafer, based on a high efficiency, strain-balanced laser core was processed into a lateral injection buried heterostructure laser geometry. A pulsed efficiency of 11.1% was demonstrated at room temperature, with an emission wavelength of 8.35μ m. With low fidelity, epilayer-up packaging, CW emission up to 343 K was also demonstrated, with a maximum output power of > 0.7 W near room temperature.",

keywords = "Quantum cascade laser, heteroepitaxy, monolithic integration",

author = "Steven Slivken and Manijeh Razeghi",

note = "Publisher Copyright: {\textcopyright} 1965-2012 IEEE.",

year = "2023",

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doi = "10.1109/JQE.2023.3282710",

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T1 - Room Temperature, Continuous Wave Quantum Cascade Laser Grown Directly on a Si Wafer

AU - Slivken, Steven

AU - Razeghi, Manijeh

PY - 2023/8/1

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N2 - We report the room temperature demonstration of a high power, continuous wave, LWIR quantum cascade laser grown directly on a Si substrate. A new wafer, based on a high efficiency, strain-balanced laser core was processed into a lateral injection buried heterostructure laser geometry. A pulsed efficiency of 11.1% was demonstrated at room temperature, with an emission wavelength of 8.35μ m. With low fidelity, epilayer-up packaging, CW emission up to 343 K was also demonstrated, with a maximum output power of > 0.7 W near room temperature.

AB - We report the room temperature demonstration of a high power, continuous wave, LWIR quantum cascade laser grown directly on a Si substrate. A new wafer, based on a high efficiency, strain-balanced laser core was processed into a lateral injection buried heterostructure laser geometry. A pulsed efficiency of 11.1% was demonstrated at room temperature, with an emission wavelength of 8.35μ m. With low fidelity, epilayer-up packaging, CW emission up to 343 K was also demonstrated, with a maximum output power of > 0.7 W near room temperature.

KW - Quantum cascade laser

KW - heteroepitaxy

KW - monolithic integration

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Room Temperature, Continuous Wave Quantum Cascade Laser Grown Directly on a Si Wafer

Abstract

Keywords

ASJC Scopus subject areas

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