Room Temperature, Continuous Wave Quantum Cascade Laser Grown Directly on a Si Wafer

Steven Slivken, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We report the room temperature demonstration of a high power, continuous wave, LWIR quantum cascade laser grown directly on a Si substrate. A new wafer, based on a high efficiency, strain-balanced laser core was processed into a lateral injection buried heterostructure laser geometry. A pulsed efficiency of 11.1% was demonstrated at room temperature, with an emission wavelength of 8.35μ m. With low fidelity, epilayer-up packaging, CW emission up to 343 K was also demonstrated, with a maximum output power of > 0.7 W near room temperature.

Original languageEnglish (US)
Article number2300206
JournalIEEE Journal of Quantum Electronics
Volume59
Issue number4
DOIs
StatePublished - Aug 1 2023

Keywords

  • Quantum cascade laser
  • heteroepitaxy
  • monolithic integration

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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