Room temperature CW operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1·23 μm grown by low-pressure metalorganic chemical vapour deposition

M. Razeghi, J. P. Hirtz, P. Hirtz, J. P. Larivain, R. Bondeau, B. De Cremoux, J. P. Duchemin

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We report the first successful room-temperature CW operation of GaInAsP/InP DH lasers emitting at 1·23 μm grown by LP MOCVD. Current thresholds as low as 250 mA have been obtained for CW operation.

Original languageEnglish (US)
Pages (from-to)597-598
Number of pages2
JournalElectronics Letters
Volume17
Issue number17
DOIs
StatePublished - Aug 20 1981

Keywords

  • Epitaxy
  • III-V semiconductors
  • Semiconductor devices and materials
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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