Abstract
We report the first successful room-temperature CW operation of GaInAsP/InP DH lasers emitting at 1·23 μm grown by LP MOCVD. Current thresholds as low as 250 mA have been obtained for CW operation.
Original language | English (US) |
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Pages (from-to) | 597-598 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 17 |
Issue number | 17 |
DOIs | |
State | Published - Aug 20 1981 |
Keywords
- Epitaxy
- III-V semiconductors
- Semiconductor devices and materials
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering