We report the first successful room-temperature CW operation of GaInAsP/InP DH lasers emitting at 1·23 μm grown by LP MOCVD. Current thresholds as low as 250 mA have been obtained for CW operation.
- III-V semiconductors
- Semiconductor devices and materials
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering