Room temperature CW operation of GaInAsP/InP double heterostructure diode lasers emitting at 1.5 μm grown by low pressure metalorganic chemical vapour deposition (LP-MO CVD)

M. Razeghi; P. Hirtz; R. Blondeau; J. P. Larivain; L. Noel; B. de Cremoux; J. P. Duchemin

doi:10.1049/el:19820088

Room temperature CW operation of GaInAsP/InP double heterostructure diode lasers emitting at 1.5 μm grown by low pressure metalorganic chemical vapour deposition (LP-MO CVD)

M. Razeghi, P. Hirtz, R. Blondeau, J. P. Larivain, L. Noel, B. de Cremoux, J. P. Duchemin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Room temperature continuous wave (CW) operation at 1·5 μm has been achieved in GaInAsP/InP DH lasers fabricated on material grown by low-pressure metalorganic chemical vapour deposition (LP-MO CVD). Threshold currents as low as 200 mA DC have been measured for devices with a stripe width of 9 μm and a cavity length of 300 μm. Values of To as high as 64 K. have been obtained, where T₀ is defined by the expression J_th(T) = J_th(0) exp (T/T₀). Fundamental transverse mode oscillation has been achieved up to an output power of 10 mW.

Original language	English (US)
Pages (from-to)	132-133
Number of pages	2
Journal	Electronics Letters
Volume	18
Issue number	3
DOIs	https://doi.org/10.1049/el:19820088
State	Published - Feb 4 1982

Keywords

Lasers and applications
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19820088

Cite this

@article{07ff42e4fbc54c9487f35e04bbdcdeb3,

title = "Room temperature CW operation of GaInAsP/InP double heterostructure diode lasers emitting at 1.5 μm grown by low pressure metalorganic chemical vapour deposition (LP-MO CVD)",

abstract = "Room temperature continuous wave (CW) operation at 1·5 μm has been achieved in GaInAsP/InP DH lasers fabricated on material grown by low-pressure metalorganic chemical vapour deposition (LP-MO CVD). Threshold currents as low as 200 mA DC have been measured for devices with a stripe width of 9 μm and a cavity length of 300 μm. Values of To as high as 64 K. have been obtained, where T0 is defined by the expression Jth(T) = Jth(0) exp (T/T0). Fundamental transverse mode oscillation has been achieved up to an output power of 10 mW.",

keywords = "Lasers and applications, Semiconductor lasers",

author = "M. Razeghi and P. Hirtz and R. Blondeau and Larivain, {J. P.} and L. Noel and {de Cremoux}, B. and Duchemin, {J. P.}",

year = "1982",

month = feb,

day = "4",

doi = "10.1049/el:19820088",

language = "English (US)",

volume = "18",

pages = "132--133",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "3",

}

TY - JOUR

T1 - Room temperature CW operation of GaInAsP/InP double heterostructure diode lasers emitting at 1.5 μm grown by low pressure metalorganic chemical vapour deposition (LP-MO CVD)

AU - Razeghi, M.

AU - Hirtz, P.

AU - Blondeau, R.

AU - Larivain, J. P.

AU - Noel, L.

AU - de Cremoux, B.

AU - Duchemin, J. P.

PY - 1982/2/4

Y1 - 1982/2/4

N2 - Room temperature continuous wave (CW) operation at 1·5 μm has been achieved in GaInAsP/InP DH lasers fabricated on material grown by low-pressure metalorganic chemical vapour deposition (LP-MO CVD). Threshold currents as low as 200 mA DC have been measured for devices with a stripe width of 9 μm and a cavity length of 300 μm. Values of To as high as 64 K. have been obtained, where T0 is defined by the expression Jth(T) = Jth(0) exp (T/T0). Fundamental transverse mode oscillation has been achieved up to an output power of 10 mW.

AB - Room temperature continuous wave (CW) operation at 1·5 μm has been achieved in GaInAsP/InP DH lasers fabricated on material grown by low-pressure metalorganic chemical vapour deposition (LP-MO CVD). Threshold currents as low as 200 mA DC have been measured for devices with a stripe width of 9 μm and a cavity length of 300 μm. Values of To as high as 64 K. have been obtained, where T0 is defined by the expression Jth(T) = Jth(0) exp (T/T0). Fundamental transverse mode oscillation has been achieved up to an output power of 10 mW.

KW - Lasers and applications

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=0020474493&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020474493&partnerID=8YFLogxK

U2 - 10.1049/el:19820088

DO - 10.1049/el:19820088

M3 - Article

AN - SCOPUS:0020474493

SN - 0013-5194

VL - 18

SP - 132

EP - 133

JO - Electronics Letters

JF - Electronics Letters

IS - 3

ER -

Room temperature CW operation of GaInAsP/InP double heterostructure diode lasers emitting at 1.5 μm grown by low pressure metalorganic chemical vapour deposition (LP-MO CVD)

Abstract

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