Room temperature continuous wave (CW) operation at 1·5 μm has been achieved in GaInAsP/InP DH lasers fabricated on material grown by low-pressure metalorganic chemical vapour deposition (LP-MO CVD). Threshold currents as low as 200 mA DC have been measured for devices with a stripe width of 9 μm and a cavity length of 300 μm. Values of To as high as 64 K. have been obtained, where T0 is defined by the expression Jth(T) = Jth(0) exp (T/T0). Fundamental transverse mode oscillation has been achieved up to an output power of 10 mW.
- Lasers and applications
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering