Room temperature CW operation of GaInAsP/InP double heterostructure diode lasers emitting at 1.5 μm grown by low pressure metalorganic chemical vapour deposition (LP-MO CVD)

M. Razeghi, P. Hirtz, R. Blondeau, J. P. Larivain, L. Noel, B. de Cremoux, J. P. Duchemin

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Room temperature continuous wave (CW) operation at 1·5 μm has been achieved in GaInAsP/InP DH lasers fabricated on material grown by low-pressure metalorganic chemical vapour deposition (LP-MO CVD). Threshold currents as low as 200 mA DC have been measured for devices with a stripe width of 9 μm and a cavity length of 300 μm. Values of To as high as 64 K. have been obtained, where T0 is defined by the expression Jth(T) = Jth(0) exp (T/T0). Fundamental transverse mode oscillation has been achieved up to an output power of 10 mW.

Original languageEnglish (US)
Pages (from-to)132-133
Number of pages2
JournalElectronics Letters
Volume18
Issue number3
DOIs
StatePublished - Feb 4 1982

Keywords

  • Lasers and applications
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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