Room-temperature excitons in Ga0.47In0.53As-InP superlattices grown by low-pressure metalorganic chemical vapor deposition

M. Razeghi; J. Nagle; P. Maurel; F. Omnes; J. P. Pocholle

doi:10.1063/1.97437

Room-temperature excitons in Ga_0.47In_0.53As-InP superlattices grown by low-pressure metalorganic chemical vapor deposition

M. Razeghi^*, J. Nagle, P. Maurel, F. Omnes, J. P. Pocholle

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Very high quality Ga_0.47In_0.53As-InP heterojunctions, quantum wells, and superlattices have been grown by low-pressure metalorganic chemical vapor deposition. Excitation spectroscopy shows evidence of strong and well-resolved exciton peaks in the luminescence and excitation spectra of GaInAs-InP quantum wells. Optical absorption spectra show room-temperature excitons in GaInAs-InP superlattices.

Original language	English (US)
Pages (from-to)	1110-1111
Number of pages	2
Journal	Applied Physics Letters
Volume	49
Issue number	17
DOIs	https://doi.org/10.1063/1.97437
State	Published - 1986

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Very high quality Ga0.47In0.53As-InP heterojunctions, quantum wells, and superlattices have been grown by low-pressure metalorganic chemical vapor deposition. Excitation spectroscopy shows evidence of strong and well-resolved exciton peaks in the luminescence and excitation spectra of GaInAs-InP quantum wells. Optical absorption spectra show room-temperature excitons in GaInAs-InP superlattices.",

author = "M. Razeghi and J. Nagle and P. Maurel and F. Omnes and Pocholle, {J. P.}",

year = "1986",

doi = "10.1063/1.97437",

language = "English (US)",

volume = "49",

pages = "1110--1111",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Room-temperature excitons in Ga0.47In0.53As-InP superlattices grown by low-pressure metalorganic chemical vapor deposition

AU - Razeghi, M.

AU - Nagle, J.

AU - Maurel, P.

AU - Omnes, F.

AU - Pocholle, J. P.

PY - 1986

Y1 - 1986

N2 - Very high quality Ga0.47In0.53As-InP heterojunctions, quantum wells, and superlattices have been grown by low-pressure metalorganic chemical vapor deposition. Excitation spectroscopy shows evidence of strong and well-resolved exciton peaks in the luminescence and excitation spectra of GaInAs-InP quantum wells. Optical absorption spectra show room-temperature excitons in GaInAs-InP superlattices.

AB - Very high quality Ga0.47In0.53As-InP heterojunctions, quantum wells, and superlattices have been grown by low-pressure metalorganic chemical vapor deposition. Excitation spectroscopy shows evidence of strong and well-resolved exciton peaks in the luminescence and excitation spectra of GaInAs-InP quantum wells. Optical absorption spectra show room-temperature excitons in GaInAs-InP superlattices.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Room-temperature excitons in Ga_0.47In_0.53As-InP superlattices grown by low-pressure metalorganic chemical vapor deposition

Abstract

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