Room-temperature excitons in Ga0.47In0.53As-InP superlattices grown by low-pressure metalorganic chemical vapor deposition

M. Razeghi*, J. Nagle, P. Maurel, F. Omnes, J. P. Pocholle

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Very high quality Ga0.47In0.53As-InP heterojunctions, quantum wells, and superlattices have been grown by low-pressure metalorganic chemical vapor deposition. Excitation spectroscopy shows evidence of strong and well-resolved exciton peaks in the luminescence and excitation spectra of GaInAs-InP quantum wells. Optical absorption spectra show room-temperature excitons in GaInAs-InP superlattices.

Original languageEnglish (US)
Pages (from-to)1110-1111
Number of pages2
JournalApplied Physics Letters
Volume49
Issue number17
DOIs
StatePublished - Dec 1 1986

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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