Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes

C. Bayram*, Z. Vashaei, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

III-nitride resonant tunneling diodes (RTDs), consisting Al0.2 Ga0.8 N/GaN double-barrier (DB) active layers, were grown on c-plane lateral epitaxial overgrowth (LEO) GaN/sapphire and c-plane freestanding (FS) GaN. RTDs on both templates, fabricated into mesa diameters ranging from 5 to 35 μm, showed negative differential resistance (NDR) at room temperature. NDR characteristics (voltage and current density at NDR onset and current-peak-to-valley ratio) were analyzed and reported as a function of device size and substrate choice. Our results show that LEO RTDs perform as well as FS ones and DB active layer design and quality have been the bottlenecks in III-nitride RTDs.

Original languageEnglish (US)
Article number092104
JournalApplied Physics Letters
Volume97
Issue number9
DOIs
StatePublished - Aug 30 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes'. Together they form a unique fingerprint.

Cite this