Room temperature operation of 8-12 μm InSbBi infrared photodetectors on GaAs substrates

J. J. Lee; J. D. Kim; M. Razeghi

doi:10.1063/1.121869

Room temperature operation of 8-12 μm InSbBi infrared photodetectors on GaAs substrates

J. J. Lee^*, J. D. Kim, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

We report the room temperature operation of 8-12 μm InSbBi long-wavelength infrared photodetectors. The InSbBi/InSb heterostructures were grown on semi-insulating GaAs (001) substrates by low pressure metalorganic chemical vapor deposition. The voltage responsivity at 10.6 μm was about 1.9 mV/W at room temperature and the corresponding Johnson noise limited detectivity was estimated to be about 1.2×10⁶cmHz^1/2/W. The carrier lifetime derived from the voltage dependent responsivity measurements was about 0.7 ns.

Original language	English (US)
Pages (from-to)	602-604
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	5
DOIs	https://doi.org/10.1063/1.121869
State	Published - 1998

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.121869

Cite this

@article{e09df9cc26f146a2965e9e29c92019bd,

title = "Room temperature operation of 8-12 μm InSbBi infrared photodetectors on GaAs substrates",

abstract = "We report the room temperature operation of 8-12 μm InSbBi long-wavelength infrared photodetectors. The InSbBi/InSb heterostructures were grown on semi-insulating GaAs (001) substrates by low pressure metalorganic chemical vapor deposition. The voltage responsivity at 10.6 μm was about 1.9 mV/W at room temperature and the corresponding Johnson noise limited detectivity was estimated to be about 1.2×106cmHz1/2/W. The carrier lifetime derived from the voltage dependent responsivity measurements was about 0.7 ns.",

author = "Lee, {J. J.} and Kim, {J. D.} and M. Razeghi",

year = "1998",

doi = "10.1063/1.121869",

language = "English (US)",

volume = "73",

pages = "602--604",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Room temperature operation of 8-12 μm InSbBi infrared photodetectors on GaAs substrates

AU - Lee, J. J.

AU - Kim, J. D.

AU - Razeghi, M.

PY - 1998

Y1 - 1998

N2 - We report the room temperature operation of 8-12 μm InSbBi long-wavelength infrared photodetectors. The InSbBi/InSb heterostructures were grown on semi-insulating GaAs (001) substrates by low pressure metalorganic chemical vapor deposition. The voltage responsivity at 10.6 μm was about 1.9 mV/W at room temperature and the corresponding Johnson noise limited detectivity was estimated to be about 1.2×106cmHz1/2/W. The carrier lifetime derived from the voltage dependent responsivity measurements was about 0.7 ns.

AB - We report the room temperature operation of 8-12 μm InSbBi long-wavelength infrared photodetectors. The InSbBi/InSb heterostructures were grown on semi-insulating GaAs (001) substrates by low pressure metalorganic chemical vapor deposition. The voltage responsivity at 10.6 μm was about 1.9 mV/W at room temperature and the corresponding Johnson noise limited detectivity was estimated to be about 1.2×106cmHz1/2/W. The carrier lifetime derived from the voltage dependent responsivity measurements was about 0.7 ns.

UR - http://www.scopus.com/inward/record.url?scp=0000861786&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000861786&partnerID=8YFLogxK

U2 - 10.1063/1.121869

DO - 10.1063/1.121869

M3 - Article

AN - SCOPUS:0000861786

SN - 0003-6951

VL - 73

SP - 602

EP - 604

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Room temperature operation of 8-12 μm InSbBi infrared photodetectors on GaAs substrates

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this