Room temperature operation of 8-12 μm InSbBi infrared photodetectors on GaAs substrates

J. J. Lee*, J. D. Kim, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

We report the room temperature operation of 8-12 μm InSbBi long-wavelength infrared photodetectors. The InSbBi/InSb heterostructures were grown on semi-insulating GaAs (001) substrates by low pressure metalorganic chemical vapor deposition. The voltage responsivity at 10.6 μm was about 1.9 mV/W at room temperature and the corresponding Johnson noise limited detectivity was estimated to be about 1.2×106cmHz1/2/W. The carrier lifetime derived from the voltage dependent responsivity measurements was about 0.7 ns.

Original languageEnglish (US)
Pages (from-to)602-604
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number5
DOIs
StatePublished - Dec 1 1998

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Room temperature operation of 8-12 μm InSbBi infrared photodetectors on GaAs substrates'. Together they form a unique fingerprint.

  • Cite this