Room temperature operation of InxGa1-xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD

D. H. Wu, Y. Y. Zhang, M. Razeghi

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


We demonstrate room temperature operation of In0.5Ga0.5Sb/InAs type-II quantum well photodetectors on an InAs substrate grown by metal-organic chemical vapor deposition. At 300 K, the detector exhibits a dark current density of 0.12 A/cm2 and a peak responsivity of 0.72 A/W corresponding to a quantum efficiency of 23.3%, with the calculated specific detectivity of 2.4 × 109 cm Hz1/2/W at 3.81 μm.

Original languageEnglish (US)
Article number111103
JournalApplied Physics Letters
Issue number11
StatePublished - Mar 12 2018

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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