Long-wavelength InTlSb photodetectors operating at room temperature are reported. The photodetectors were grown on (100) semi-insulating GaAs substrates by low-pressure metalorganic chemical vapor deposition. Photoresponse of InTlSb photodetectors is observed up to 11 μm at room temperature. The maximum responsivity of an In0.96Tl0.04Sb photodetector is about 6.64 V/W at 77 K, corresponding to a detectivity of about 7.64 X 108 cm Hz1/2/W. The carrier lifetime in InTlSb photodetectors derived from the stationary photoconductivity is 10-50 ns at 77 K.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)