Room-temperature operation of InTlSb infrared photodetectors on GaAs

J. D. Kim*, E. Michel, S. Park, J. Xu, S. Javadpour, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Long-wavelength InTlSb photodetectors operating at room temperature are reported. The photodetectors were grown on (100) semi-insulating GaAs substrates by low-pressure metalorganic chemical vapor deposition. Photoresponse of InTlSb photodetectors is observed up to 11 μm at room temperature. The maximum responsivity of an In0.96Tl0.04Sb photodetector is about 6.64 V/W at 77 K, corresponding to a detectivity of about 7.64 X 108 cm Hz1/2/W. The carrier lifetime in InTlSb photodetectors derived from the stationary photoconductivity is 10-50 ns at 77 K.

Original languageEnglish (US)
Pages (from-to)343-344
Number of pages2
JournalApplied Physics Letters
Volume69
Issue number3
DOIs
StatePublished - Jul 15 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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