@article{93ed9203a4544f908a522748b8b9dc75,
title = "Room-Temperature-Synthesized High-Mobility Transparent Amorphous CdO-Ga2O3 Alloys with Widely Tunable Electronic Bands",
abstract = "In this work, we have synthesized Cd1-xGaxO1+δ alloy thin films at room temperature over the entire composition range by radio frequency magnetron sputtering. We found that alloy films with high Ga contents of x > 0.3 are amorphous. Amorphous Cd1-xGaxO1+δ alloys in the composition range of 0.3 < x < 0.5 exhibit a high electron mobility of 10-20 cm2 V-1 s-1 with a resistivity in the range of 10-2 to high 10-4 ω cm range. The resistivity of the amorphous alloys can also be controlled over 5 orders of magnitude from 7 × 10-4 to 77 ω cm by controlling the oxygen stoichiometry. Over the entire composition range, these crystalline and amorphous alloys have a large tunable intrinsic band gap range of 2.2-4.8 eV as well as a conduction band minimum range of 5.8-4.5 eV below the vacuum level. Our results suggest that amorphous Cd1-xGaxO1+δ alloy films with 0.3 < x < 0.4 have favorable optoelectronic properties as transparent conductors on flexible and/or organic substrates, whereas the band edges and electrical conductivity of films with 0.3 < x < 0.7 can be manipulated for transparent thin-film transistors as well as electron transport layers.",
keywords = "amorphous transparent conducting oxides, flexible electronics, oxide semiconductors, transparent conductors, transparent electronics",
author = "Liu, {Chao Ping} and Ho, {Chun Yuen} and {dos Reis}, Roberto and Yishu Foo and Guo, {Peng Fei} and Zapien, {Juan Antonio} and Wladek Walukiewicz and Yu, {Kin Man}",
note = "Funding Information: This work is supported by the General Research Fund of the Research Grants Council of Hong Kong SAR, China, under project no. CityU 11267516. Materials characterization by RBS analysis (Electronic Materials Program) and TEM (National Center for Electron Microscopy/Molecular Foundry) at Lawrence Berkeley National Laboratory were supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division of the U.S. Department of Energy under contract no. DE-AC02-05CH11231. J.A.Z. acknowledges support by the Research Grants Council, University Grants Committee, Hong Kong (project no. CityU 122812). Y.F. was supported by the Hong Kong Ph.D. Fellowship no. PF-15139, Research Grants Council University Grants Committee, Hong Kong. Funding Information: Department of Energy under contract no. DE-AC02-05CH11231. J.A.Z. acknowledges support by the Research Grants Council, University Grants Committee, Hong Kong (project no. CityU 122812). Y.F. was supported by the Hong Kong Ph.D. Fellowship no. PF-15139, Research Grants Council, University Grants Committee, Hong Kong. Funding Information: This work is supported by the General Research Fund of the Research Grants Council of Hong Kong SAR, China, under project no. CityU 11267516. Materials characterization by RBS analysis (Electronic Materials Program) and TEM (National Center for Electron Microscopy/Molecular Foundry) at Lawrence Berkeley National Laboratory were supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",
year = "2018",
month = feb,
day = "28",
doi = "10.1021/acsami.7b18254",
language = "English (US)",
volume = "10",
pages = "7239--7247",
journal = "ACS Applied Materials and Interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "8",
}