Room temperature UV emission of MgxZn1-xO films

Yanbo Jin; Bei Zhang; Shuming Yang; Yongzhong Wang; Jing Chen; Huizhen Zhang; Chunhui Huang; Changqi Cao; H. Cao; R. P.H. Chang

doi:10.1016/S0038-1098(01)00244-7

Room temperature UV emission of Mg_xZn_1-xO films

Yanbo Jin, Bei Zhang^*, Shuming Yang, Yongzhong Wang, Jing Chen, Huizhen Zhang, Chunhui Huang, Changqi Cao, H. Cao, R. P.H. Chang

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

II-VI wide band-gap semiconductor ternary Mg_xZn_1-xO nanocrystalline films have been successfully formed on conductive glass from ZnO powder by electrophoresis deposition (EDP). In comparison with ZnO powder, the Mg_xZn_1-xO films presented a more preferential crystalline orientation. Room temperature (RT) PL spectra of Mg_xZn_1-xO films revealed a stronger band-edge ultraviolet (UV) emission and a narrower FWMH of 13 nm than that of ZnO powder. The UV emission peak of Mg_xZn_1-xO film is located at the range of 375-381 nm with a small blue shift from that of ZnO powder. In addition, the ratio of PL peak intensity of band-edge emission to the deep-level emission in Mg_xZn_1-xO films reached as high as 135:1 while compared with 23:1 of ZnO powder under the same He-Cd laser excitation level. Consequently, these electrophoretic deposition (EPD) Mg_xZn_1-xO films exhibited a good quality for excitonic emission at RT.

Original language	English (US)
Pages (from-to)	409-413
Number of pages	5
Journal	Solid State Communications
Volume	119
Issue number	6
DOIs	https://doi.org/10.1016/S0038-1098(01)00244-7
State	Published - Jul 31 2001

Keywords

A. Semiconductors
A. Thin film
C. X-ray scattering
E. Luminescence

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/S0038-1098(01)00244-7

Cite this

@article{5ab4c409447c436ea5c5f3be490c28ac,

title = "Room temperature UV emission of MgxZn1-xO films",

abstract = "II-VI wide band-gap semiconductor ternary MgxZn1-xO nanocrystalline films have been successfully formed on conductive glass from ZnO powder by electrophoresis deposition (EDP). In comparison with ZnO powder, the MgxZn1-xO films presented a more preferential crystalline orientation. Room temperature (RT) PL spectra of MgxZn1-xO films revealed a stronger band-edge ultraviolet (UV) emission and a narrower FWMH of 13 nm than that of ZnO powder. The UV emission peak of MgxZn1-xO film is located at the range of 375-381 nm with a small blue shift from that of ZnO powder. In addition, the ratio of PL peak intensity of band-edge emission to the deep-level emission in MgxZn1-xO films reached as high as 135:1 while compared with 23:1 of ZnO powder under the same He-Cd laser excitation level. Consequently, these electrophoretic deposition (EPD) MgxZn1-xO films exhibited a good quality for excitonic emission at RT.",

keywords = "A. Semiconductors, A. Thin film, C. X-ray scattering, E. Luminescence",

author = "Yanbo Jin and Bei Zhang and Shuming Yang and Yongzhong Wang and Jing Chen and Huizhen Zhang and Chunhui Huang and Changqi Cao and H. Cao and Chang, {R. P.H.}",

note = "Funding Information: This work was supported by National Nature Science Foundation of China (NNSFC) projects of Nos. 69686260 and 60077022, the Opening Projects of State Key Laboratory for Mesoscopic Physics of China and State Key Laboratory for Integrated Electro-Optics of China. Funding Information: Supported by National Nature Science Foundation of China (NNSFC) projects of Nos. 69686260 and 60077022, the Opening projects of State Key Laboratory for Mesoscopic Physics of China and State Key Laboratory for Integrated Electro-Optics of China. ",

year = "2001",

month = jul,

day = "31",

doi = "10.1016/S0038-1098(01)00244-7",

language = "English (US)",

volume = "119",

pages = "409--413",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "6",

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TY - JOUR

T1 - Room temperature UV emission of MgxZn1-xO films

AU - Jin, Yanbo

AU - Zhang, Bei

AU - Yang, Shuming

AU - Wang, Yongzhong

AU - Chen, Jing

AU - Zhang, Huizhen

AU - Huang, Chunhui

AU - Cao, Changqi

AU - Cao, H.

AU - Chang, R. P.H.

N1 - Funding Information: This work was supported by National Nature Science Foundation of China (NNSFC) projects of Nos. 69686260 and 60077022, the Opening Projects of State Key Laboratory for Mesoscopic Physics of China and State Key Laboratory for Integrated Electro-Optics of China. Funding Information: Supported by National Nature Science Foundation of China (NNSFC) projects of Nos. 69686260 and 60077022, the Opening projects of State Key Laboratory for Mesoscopic Physics of China and State Key Laboratory for Integrated Electro-Optics of China.

PY - 2001/7/31

Y1 - 2001/7/31

N2 - II-VI wide band-gap semiconductor ternary MgxZn1-xO nanocrystalline films have been successfully formed on conductive glass from ZnO powder by electrophoresis deposition (EDP). In comparison with ZnO powder, the MgxZn1-xO films presented a more preferential crystalline orientation. Room temperature (RT) PL spectra of MgxZn1-xO films revealed a stronger band-edge ultraviolet (UV) emission and a narrower FWMH of 13 nm than that of ZnO powder. The UV emission peak of MgxZn1-xO film is located at the range of 375-381 nm with a small blue shift from that of ZnO powder. In addition, the ratio of PL peak intensity of band-edge emission to the deep-level emission in MgxZn1-xO films reached as high as 135:1 while compared with 23:1 of ZnO powder under the same He-Cd laser excitation level. Consequently, these electrophoretic deposition (EPD) MgxZn1-xO films exhibited a good quality for excitonic emission at RT.

AB - II-VI wide band-gap semiconductor ternary MgxZn1-xO nanocrystalline films have been successfully formed on conductive glass from ZnO powder by electrophoresis deposition (EDP). In comparison with ZnO powder, the MgxZn1-xO films presented a more preferential crystalline orientation. Room temperature (RT) PL spectra of MgxZn1-xO films revealed a stronger band-edge ultraviolet (UV) emission and a narrower FWMH of 13 nm than that of ZnO powder. The UV emission peak of MgxZn1-xO film is located at the range of 375-381 nm with a small blue shift from that of ZnO powder. In addition, the ratio of PL peak intensity of band-edge emission to the deep-level emission in MgxZn1-xO films reached as high as 135:1 while compared with 23:1 of ZnO powder under the same He-Cd laser excitation level. Consequently, these electrophoretic deposition (EPD) MgxZn1-xO films exhibited a good quality for excitonic emission at RT.

KW - A. Semiconductors

KW - A. Thin film

KW - C. X-ray scattering

KW - E. Luminescence

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JO - Solid State Communications

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SN - 0038-1098

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