Rotationally commensurate growth of MoS2 on epitaxial graphene

Xiaolong Liu; Itamar Balla; Hadallia Bergeron; Gavin P. Campbell; Michael J. Bedzyk; Mark C. Hersam

doi:10.1021/acsnano.5b06398

Rotationally commensurate growth of MoS₂ on epitaxial graphene

Xiaolong Liu, Itamar Balla, Hadallia Bergeron, Gavin P. Campbell, Michael J. Bedzyk^*, Mark C. Hersam

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

181 Scopus citations

Abstract

Atomically thin MoS₂/graphene heterostructures are promising candidates for nanoelectronic and optoelectronic technologies. Among different graphene substrates, epitaxial graphene (EG) on SiC provides several potential advantages for such heterostructures, including high electronic quality, tunable substrate coupling, wafer-scale processability, and crystalline ordering that can template commensurate growth. Exploiting these attributes, we demonstrate here the thicknesscontrolled van der Waals epitaxial growth of MoS₂ on EG via chemical vapor deposition, giving rise to transfer-free synthesis of a twodimensional heterostructure with registry between its constituent materials. The rotational commensurability observed between the MoS₂ and EG is driven by the energetically favorable alignment of their respective lattices and results in nearly strain-free MoS₂, as evidenced by synchrotron X-ray scattering and atomicresolution scanning tunneling microscopy (STM). The electronic nature of the MoS₂/EG heterostructure is elucidated with STM and scanning tunneling spectroscopy, which reveals bias-dependent apparent thickness, band bending, and a reduced band gap of ∼0.4 eV at the monolayer MoS₂ edges.

Original language	English (US)
Pages (from-to)	1067-1075
Number of pages	9
Journal	ACS nano
Volume	10
Issue number	1
DOIs	https://doi.org/10.1021/acsnano.5b06398
State	Published - Jan 26 2016

Funding

CVD growth was supported by the National Institute of Standards and Technology (NIST CHiMaD 70NANB14H012). STM/STS characterization was supported by the U.S. Department of Energy SISGR program (DOE DEFG02-09ER16109). Raman and XPS characterization was supported by the Office of Naval Research (ONR N00014-14-1-0669), and synchrotron X-ray scattering measurements were supported by the Materials Research Science and Engineering Center (MRSEC) of Northwestern University (NSF DMR-1121262). Use of the Advanced Photon Source at Argonne National Laboratory was supported by DOE-BES (DE-AC02-06CH11357). The Raman instrumentation was funded by the Argonne-Northwestern Solar Energy Research (ANSER) Energy Frontier Research Center (DOE DESC0001059). The authors kindly thank Dr. Kan-Sheng Chen, Dr. Jian Zhu, Dr. Junmo Kang, Dr. Joshua Wood, Dr. Jonathan Emery, Dr. Zhan Zhang, Dr. Hua Zhou, Andrew Mannix, and Zonghui Wei for valuable discussions.

Keywords

Chemical vapor deposition
Scanning tunneling microscopy
Silicon carbide
Synchrotron X-ray scattering
Transition metal dichalcogenide
Van der Waals heterostructure

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy
General Materials Science

Access to Document

10.1021/acsnano.5b06398

Cite this

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title = "Rotationally commensurate growth of MoS2 on epitaxial graphene",

abstract = "Atomically thin MoS2/graphene heterostructures are promising candidates for nanoelectronic and optoelectronic technologies. Among different graphene substrates, epitaxial graphene (EG) on SiC provides several potential advantages for such heterostructures, including high electronic quality, tunable substrate coupling, wafer-scale processability, and crystalline ordering that can template commensurate growth. Exploiting these attributes, we demonstrate here the thicknesscontrolled van der Waals epitaxial growth of MoS2 on EG via chemical vapor deposition, giving rise to transfer-free synthesis of a twodimensional heterostructure with registry between its constituent materials. The rotational commensurability observed between the MoS2 and EG is driven by the energetically favorable alignment of their respective lattices and results in nearly strain-free MoS2, as evidenced by synchrotron X-ray scattering and atomicresolution scanning tunneling microscopy (STM). The electronic nature of the MoS2/EG heterostructure is elucidated with STM and scanning tunneling spectroscopy, which reveals bias-dependent apparent thickness, band bending, and a reduced band gap of ∼0.4 eV at the monolayer MoS2 edges.",

keywords = "Chemical vapor deposition, Scanning tunneling microscopy, Silicon carbide, Synchrotron X-ray scattering, Transition metal dichalcogenide, Van der Waals heterostructure",

author = "Xiaolong Liu and Itamar Balla and Hadallia Bergeron and Campbell, {Gavin P.} and Bedzyk, {Michael J.} and Hersam, {Mark C.}",

note = "Publisher Copyright: {\textcopyright} 2015 American Chemical Society.",

year = "2016",

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doi = "10.1021/acsnano.5b06398",

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AU - Balla, Itamar

AU - Bergeron, Hadallia

AU - Campbell, Gavin P.

AU - Bedzyk, Michael J.

AU - Hersam, Mark C.

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N2 - Atomically thin MoS2/graphene heterostructures are promising candidates for nanoelectronic and optoelectronic technologies. Among different graphene substrates, epitaxial graphene (EG) on SiC provides several potential advantages for such heterostructures, including high electronic quality, tunable substrate coupling, wafer-scale processability, and crystalline ordering that can template commensurate growth. Exploiting these attributes, we demonstrate here the thicknesscontrolled van der Waals epitaxial growth of MoS2 on EG via chemical vapor deposition, giving rise to transfer-free synthesis of a twodimensional heterostructure with registry between its constituent materials. The rotational commensurability observed between the MoS2 and EG is driven by the energetically favorable alignment of their respective lattices and results in nearly strain-free MoS2, as evidenced by synchrotron X-ray scattering and atomicresolution scanning tunneling microscopy (STM). The electronic nature of the MoS2/EG heterostructure is elucidated with STM and scanning tunneling spectroscopy, which reveals bias-dependent apparent thickness, band bending, and a reduced band gap of ∼0.4 eV at the monolayer MoS2 edges.

AB - Atomically thin MoS2/graphene heterostructures are promising candidates for nanoelectronic and optoelectronic technologies. Among different graphene substrates, epitaxial graphene (EG) on SiC provides several potential advantages for such heterostructures, including high electronic quality, tunable substrate coupling, wafer-scale processability, and crystalline ordering that can template commensurate growth. Exploiting these attributes, we demonstrate here the thicknesscontrolled van der Waals epitaxial growth of MoS2 on EG via chemical vapor deposition, giving rise to transfer-free synthesis of a twodimensional heterostructure with registry between its constituent materials. The rotational commensurability observed between the MoS2 and EG is driven by the energetically favorable alignment of their respective lattices and results in nearly strain-free MoS2, as evidenced by synchrotron X-ray scattering and atomicresolution scanning tunneling microscopy (STM). The electronic nature of the MoS2/EG heterostructure is elucidated with STM and scanning tunneling spectroscopy, which reveals bias-dependent apparent thickness, band bending, and a reduced band gap of ∼0.4 eV at the monolayer MoS2 edges.

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