Sb-based infrared materials and photodetectors for the 3-5 and 8-12 um range

Erick J. Michel*, J. D. Kim, S. Park, J. Xu, Ian T. Ferguson, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


In this paper, we report on the growth of InSb on (100) Si and (111)B GaAs substrates and the growth of InAsSb alloys for longer wavelength applications. The fabrication and characterization of photodetectors based on these materials are also reported. Both photoconductive and photovoltaic devices are investigated. The photodiodes are InSb p-i-n structures and InSb/InAs 1-xSb x/InSb double heterostructures grown on (100) and (111)B semi-insulating GaAs and Si substrates by low pressure metalorganic chemical vapor deposition and solid source molecular beam epitaxy. The material parameters for device structures have been optimized through theoretical calculations based on fundamental mechanisms. InSb p-i-n photodiodes with peak responsivities approximately 10 3 V/W were grown on Si and (111) GaAs substrates. An InAsSb photovoltaic detector with a composition of x = 0.85 showed photoresponse up to 13 μm at 300 K with a peak responsivity of 9.13 × 10 -2 V/W at 8 μm. The R oA product of InAsSb detectors has been theoretically and experimentally analyzed.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsGail J. Brown, Manijeh Razeghi
Number of pages11
StatePublished - 1996
EventPhotodetectors: Materials and Devices - San Jose, CA, USA
Duration: Feb 1 1996Feb 2 1996

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherPhotodetectors: Materials and Devices
CitySan Jose, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Sb-based infrared materials and photodetectors for the 3-5 and 8-12 um range'. Together they form a unique fingerprint.

Cite this