Sb-based infrared materials and photodetectors for the 3-5 and 8-12 um range

Erick J. Michel; J. D. Kim; S. Park; J. Xu; Ian T. Ferguson; Manijeh Razeghi

Sb-based infrared materials and photodetectors for the 3-5 and 8-12 um range

Erick J. Michel^*, J. D. Kim, S. Park, J. Xu, Ian T. Ferguson, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

In this paper, we report on the growth of InSb on (100) Si and (111)B GaAs substrates and the growth of InAsSb alloys for longer wavelength applications. The fabrication and characterization of photodetectors based on these materials are also reported. Both photoconductive and photovoltaic devices are investigated. The photodiodes are InSb p-i-n structures and InSb/InAs _1-xSb _x/InSb double heterostructures grown on (100) and (111)B semi-insulating GaAs and Si substrates by low pressure metalorganic chemical vapor deposition and solid source molecular beam epitaxy. The material parameters for device structures have been optimized through theoretical calculations based on fundamental mechanisms. InSb p-i-n photodiodes with peak responsivities approximately 10 ³ V/W were grown on Si and (111) GaAs substrates. An InAsSb photovoltaic detector with a composition of x = 0.85 showed photoresponse up to 13 μm at 300 K with a peak responsivity of 9.13 × 10 ^-2 V/W at 8 μm. The R _oA product of InAsSb detectors has been theoretically and experimentally analyzed.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Gail J. Brown, Manijeh Razeghi
Pages	101-111
Number of pages	11
State	Published - 1996
Event	Photodetectors: Materials and Devices - San Jose, CA, USA Duration: Feb 1 1996 → Feb 2 1996

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2685
ISSN (Print)	0277-786X

Other

Other	Photodetectors: Materials and Devices
City	San Jose, CA, USA
Period	2/1/96 → 2/2/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Michel, E. J., Kim, J. D., Park, S., Xu, J., Ferguson, I. T., & Razeghi, M. (1996). Sb-based infrared materials and photodetectors for the 3-5 and 8-12 um range. In G. J. Brown, & M. Razeghi (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 101-111). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2685).

@inproceedings{af5e39dc76f1454ebad2218f4f313e8b,

title = "Sb-based infrared materials and photodetectors for the 3-5 and 8-12 um range",

abstract = "In this paper, we report on the growth of InSb on (100) Si and (111)B GaAs substrates and the growth of InAsSb alloys for longer wavelength applications. The fabrication and characterization of photodetectors based on these materials are also reported. Both photoconductive and photovoltaic devices are investigated. The photodiodes are InSb p-i-n structures and InSb/InAs 1-xSb x/InSb double heterostructures grown on (100) and (111)B semi-insulating GaAs and Si substrates by low pressure metalorganic chemical vapor deposition and solid source molecular beam epitaxy. The material parameters for device structures have been optimized through theoretical calculations based on fundamental mechanisms. InSb p-i-n photodiodes with peak responsivities approximately 10 3 V/W were grown on Si and (111) GaAs substrates. An InAsSb photovoltaic detector with a composition of x = 0.85 showed photoresponse up to 13 μm at 300 K with a peak responsivity of 9.13 × 10 -2 V/W at 8 μm. The R oA product of InAsSb detectors has been theoretically and experimentally analyzed.",

author = "Michel, {Erick J.} and Kim, {J. D.} and S. Park and J. Xu and Ferguson, {Ian T.} and Manijeh Razeghi",

year = "1996",

language = "English (US)",

isbn = "081942059X",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

pages = "101--111",

editor = "Brown, {Gail J.} and Manijeh Razeghi",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Photodetectors: Materials and Devices ; Conference date: 01-02-1996 Through 02-02-1996",

}

Michel, EJ, Kim, JD, Park, S, Xu, J, Ferguson, IT & Razeghi, M 1996, Sb-based infrared materials and photodetectors for the 3-5 and 8-12 um range. in GJ Brown & M Razeghi (eds), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 2685, pp. 101-111, Photodetectors: Materials and Devices, San Jose, CA, USA, 2/1/96.

Sb-based infrared materials and photodetectors for the 3-5 and 8-12 um range. / Michel, Erick J.; Kim, J. D.; Park, S. et al.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Gail J. Brown; Manijeh Razeghi. 1996. p. 101-111 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2685).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Sb-based infrared materials and photodetectors for the 3-5 and 8-12 um range

AU - Michel, Erick J.

AU - Kim, J. D.

AU - Park, S.

AU - Xu, J.

AU - Ferguson, Ian T.

AU - Razeghi, Manijeh

PY - 1996

Y1 - 1996

N2 - In this paper, we report on the growth of InSb on (100) Si and (111)B GaAs substrates and the growth of InAsSb alloys for longer wavelength applications. The fabrication and characterization of photodetectors based on these materials are also reported. Both photoconductive and photovoltaic devices are investigated. The photodiodes are InSb p-i-n structures and InSb/InAs 1-xSb x/InSb double heterostructures grown on (100) and (111)B semi-insulating GaAs and Si substrates by low pressure metalorganic chemical vapor deposition and solid source molecular beam epitaxy. The material parameters for device structures have been optimized through theoretical calculations based on fundamental mechanisms. InSb p-i-n photodiodes with peak responsivities approximately 10 3 V/W were grown on Si and (111) GaAs substrates. An InAsSb photovoltaic detector with a composition of x = 0.85 showed photoresponse up to 13 μm at 300 K with a peak responsivity of 9.13 × 10 -2 V/W at 8 μm. The R oA product of InAsSb detectors has been theoretically and experimentally analyzed.

AB - In this paper, we report on the growth of InSb on (100) Si and (111)B GaAs substrates and the growth of InAsSb alloys for longer wavelength applications. The fabrication and characterization of photodetectors based on these materials are also reported. Both photoconductive and photovoltaic devices are investigated. The photodiodes are InSb p-i-n structures and InSb/InAs 1-xSb x/InSb double heterostructures grown on (100) and (111)B semi-insulating GaAs and Si substrates by low pressure metalorganic chemical vapor deposition and solid source molecular beam epitaxy. The material parameters for device structures have been optimized through theoretical calculations based on fundamental mechanisms. InSb p-i-n photodiodes with peak responsivities approximately 10 3 V/W were grown on Si and (111) GaAs substrates. An InAsSb photovoltaic detector with a composition of x = 0.85 showed photoresponse up to 13 μm at 300 K with a peak responsivity of 9.13 × 10 -2 V/W at 8 μm. The R oA product of InAsSb detectors has been theoretically and experimentally analyzed.

UR - http://www.scopus.com/inward/record.url?scp=0029719187&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029719187&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029719187

SN - 081942059X

SN - 9780819420596

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 101

EP - 111

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Brown, Gail J.

A2 - Razeghi, Manijeh

T2 - Photodetectors: Materials and Devices

Y2 - 1 February 1996 through 2 February 1996

ER -

Sb-based infrared materials and photodetectors for the 3-5 and 8-12 um range

Abstract

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ASJC Scopus subject areas

UN SDGs

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